Plasma generation and pulsed plasma etching
View Patent ↗One or more plasma etching techniques are provided. Selective plasma etching is achieved by introducing a gas into a chamber containing a photoresist over a substrate, establishing a bias at a frequency to convert the gas to a plasma at the frequency, and using the plasma to etch the photoresist. The frequency controls an electron density of the plasma and by maintaining a low electron density causes free radicals of the plasma to chemically etch the photoresist, rather than physically etching using ion bombardment. A mechanism is thus provided for chemically etching a photoresist under what are typically physical etching conditions.
1. A method for plasma etching, comprising:
patterning a photoresist to form a patterned photoresist, wherein the patterning creates an opening through the photoresist and a first sidewall of a first portion of the patterned photoresist and a second sidewall of a second portion of the patterned photoresist below the first portion of the patterned photoresist that together define one side of the opening are tapered; and
treating the first sidewall and the second sidewall while the patterned photoresist is situated between a first electrode and a second electrode in a chamber and while maintaining a temperature within the chamber between about 20° C. to about 120° C., the treating comprising:
introducing a first gas into the chamber to expose the first sidewall and the second sidewall to the first gas while the chamber is free of plasma; and
after exposing the first sidewall and the second sidewall to the first gas, establishing a bias between the first electrode and the second electrode to convert the first gas to plasma, the bias established according to a frequency and a duty cycle selected based on a specified electron density of the plasma, wherein:
free radicals of the plasma chemically etch the second sidewall of the patterned photoresist to change a slope of the second sidewall such that the second sidewall is non-tapered after the treating; and
the temperature within the chamber pre-heats the patterned photoresist prior to the establishing a bias to convert the first gas to plasma.
2. The method of claim 1 , the bias between about 0 V to about 50 V.
3. The method of claim 1 , the frequency between about 1 kHz to about 20 kHz.
4. The method of claim 1 , the establishing a bias comprising applying between about 500 W to about 2,000 W of power to at least one of the first electrode or the second electrode.
5. The method of claim 1 , the duty cycle comprising a power on state during which power is applied to at least one of the first electrode or the second electrode and a power off state during which power is not applied to the at least one of the first electrode or the second electrode.
6. The method of claim 5 , the power on state between about 20% to about 50% of the duty cycle and the power off state between about 50% to about 80% of the duty cycle.
7. The method of claim 1 , further comprising maintaining a pressure within the chamber during the treating.
8. The method of claim 7 , the pressure between about 3 mTorr to about 200 mTorr.
9. The method of claim 1 , the first gas comprising at least one of N 2 H 2 , H 2 , Ar, CH 4 , HBr, or CI 2 .
10. The method of claim 1 , wherein the frequency is selected to facilitate conversion of at least some of the plasma back to the first gas.
11. The method of claim 1 , wherein the first electrode and the second electrode remain powered on during both a portion of the duty cycle during which the bias is established and a portion of the duty cycle during which the bias is not established.
12. A method for plasma etching, comprising:
patterning a photoresist to form a patterned photoresist, wherein:
the patterning creates a first opening and a second opening through the photoresist;
a first sidewall of the patterned photoresist defines the first opening and a second sidewall of the patterned photoresist defines the second opening;
in a first portion of the patterned photoresist, the first sidewall is separated from the second sidewall by a first distance;
in a second portion of the patterned photoresist below the first portion, the first sidewall is separated from the second sidewall by a second distance; and
a difference between the first distance and the second distance is a first absolute value; and
treating the patterned photoresist while the patterned photoresist is situated between a first electrode and a second electrode in a chamber and while maintaining a temperature within the chamber between about 20° C. to about 120° C., the treating comprising:
introducing a first gas into the chamber to expose the patterned photoresist to the first gas while the first electrode and the second electrode are powered off; and
after exposing the patterned photoresist to the first gas, establishing a bias between the first electrode and the second electrode to convert the first gas to plasma for etching the patterned photoresist, wherein:
the temperature within the chamber pre-heats the patterned photoresist prior to the establishing a bias to convert the first gas to plasma;
free radicals of the plasma chemically etch the patterned photoresist; and
the first distance and the second distance are substantially the same after the establishing a bias.
13. The method of claim 12 , the plasma having a plasma electron temperature of between about 2,000° C. to about 2,500° C.
14. The method of claim 12 , the establishing a bias comprising establishing the bias according to a frequency associated with a power supply from which power is applied to at least one of the first electrode or the second electrode to establish the bias, the frequency between about 1 kHz to about 20 kHz.
15. The method of claim 12 , the bias established according to a frequency and a duty cycle selected based on a specified electron density of the plasma.
16. A method for plasma etching, comprising:
patterning a photoresist to form a patterned photoresist, wherein the patterned photoresist has a line width roughness (LWR); and
treating the patterned photoresist while the patterned photoresist is situated between a first electrode and a second electrode in a chamber and while maintaining a temperature within the chamber between about 20° C. to about 120° C., the treating comprising:
introducing a first gas into the chamber to expose the patterned photoresist to the first gas while no bias exists between the first electrode and the second electrode; and
establishing a bias of between about 0V to about 50V between the first electrode and the second electrode at a frequency of between about 1 kHz to about 20 kHz to convert the first gas to plasma for etching the patterned photoresist, wherein:
the temperature within the chamber pre-heats the patterned photoresist prior to the establishing a bias to convert the first gas to plasma;
the frequency is selected based on a specified electron density of the plasma;
free radicals of the plasma chemically etch the patterned photoresist such that after the etching a second sidewall of a second portion of the patterned photoresist below a first portion of the patterned photoresist is non-tapered; and
the LWR of the patterned photoresist decreases due to chemically etching the patterned photoresist using the free radicals.
17. The method of claim 16 , the establishing a bias comprising applying power to at least one of the first electrode or the second electrode according to a duty cycle selected based on the specified electron density of the plasma.
18. The method of claim 17 , the duty cycle comprising a power on state during which power is applied to at least one of the first electrode or the second electrode and a power off state during which power is not applied to the at least one of the first electrode or the second electrode.
19. The method of claim 16 , the establishing a bias comprising:
establishing the bias after exposing the patterned photoresist to the first gas.