Multi-die semiconductor structure with intermediate vertical side chip and semiconductor package for same
Semiconductor multi-die structures having intermediate vertical side chips, and packages housing such semiconductor multi-die structures, are described. In an example, a multi-die semiconductor structure includes a first main stacked dies (MSD) structure having a first substantially horizontal arrangement of semiconductor dies. A second MSD structure having a second substantially horizontal arrangement of semiconductor dies is also included. An intermediate vertical side chip (i-VSC) is disposed between and electrically coupled to the first and second MSD structures.
1. A semiconductor package, comprising:
a substrate;
a main stacked dies (MSD) structure comprising a substantially horizontal arrangement of semiconductor dies interconnected to the substrate;
a vertical side chip electrically coupled to a side of the MSD structure, wherein the vertical side chip comprises one or more through silicon vias (TSVs); and
an underfill material disposed between the substrate and the MSD structure, wherein the underfill material is further disposed between the substrate and the vertical side chip.
2. The semiconductor package of claim 1 , wherein the vertical side chip is electrically coupled to the side of the MSD structure through one or more interconnections of the vertical side chip.
3. The semiconductor package of claim 2 , wherein the one or more interconnections of the vertical side chip are disposed on an active side of the vertical side chip.
4. The semiconductor package of claim 2 , wherein an interconnection of the one or more interconnections of the vertical side chip is coupled to the MSD structure through a die side pad (DSP) of the MSD structure.
5. The semiconductor package of claim 2 , wherein an interconnection of the one or more interconnections of the vertical side chip is coupled to the MSD structure through an end of metal routing of a die in the MSD structure.
6. The semiconductor package of claim 1 , wherein the vertical side chip is interconnected to the substrate.
7. The semiconductor package of claim 6 , wherein the vertical side chip is interconnected to the substrate through a die side pad (DSP) of the vertical side chip.
8. A semiconductor package, comprising:
a substrate;
a main stacked dies (MSD) structure comprising a substantially horizontal arrangement of semiconductor dies interconnected to the substrate;
a die above the substrate, the die laterally adjacent to a side of the MSD structure; and
an intermediate vertical side chip (i-VSC) between and electrically coupled to the side of the MSD structure and the die, wherein the i-VSC comprises one or more through silicon vias (TSVs).
9. The semiconductor package of claim 8 , wherein the i-VSC electrically couples the MSD structure and the die through a TSV of the one or more through silicon vias (TSVs) of the i-VSC.
10. The semiconductor package of claim 8 , wherein the i-VSC is electrically coupled to the side of the MSD structure through one or more interconnections of the i-VSC.
11. The semiconductor package of claim 10 , wherein the one or more interconnections of the i-VSC are disposed on an active side of the i-VSC.
12. The semiconductor package of claim 11 , wherein the i-VSC is coupled to the die through die backside metallization (DBM) of the i-VSC.
13. The semiconductor package of claim 10 , wherein an interconnection of the one or more interconnections of the i-VSC is coupled to the MSD structure through a die side pad (DSP) of the MSD structure.
14. The semiconductor package of claim 10 , wherein an interconnection of the one or more interconnections of the i-VSC is coupled to the MSD structure through an end of metal routing of a die in the MSD structure.
15. The semiconductor package of claim 8 , wherein the i-VSC is interconnected to the substrate.
16. The semiconductor package of claim 15 , wherein the i-VSC is interconnected to the substrate through a die side pad (DSP) of the i-VSC.
17. The semiconductor package of claim 8 , further comprising:
an underfill material disposed between the substrate and the MSD structure.
18. The semiconductor package of claim 17 , wherein the underfill material is further disposed between the substrate and the i-VSC.