Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.
1. An extreme ultraviolet lithography system comprising:
an extreme ultraviolet light source;
a mirror for directing light from the extreme ultraviolet light source;
a reticle stage for imaging the light from the extreme ultraviolet light source on to an extreme ultraviolet mask; and
a wafer stage for placing a semiconductor wafer coated with a vapor deposited
photoresist for receiving the light from the reticle stage, the vapor deposited photoresist having a top and a bottom and a different photoresist composition between the top and the bottom of the vapor deposited photoresist, the bottom being more absorbing of EUV photons from EUV radiation in a wavelength range of from 7 nanometers to 40 nanometers than the top.
2. The system as claimed in claim 1 wherein the vapor deposited photoresist is a volatile metal oxide.
3. The system as claimed in claim 1 wherein the vapor deposited photoresist includes a number of ligands and a number of metal atoms, and there is a controlled ratio of the number of ligands to the number of metal atoms to control a photoresist property.
4. The system as claimed in claim 1 wherein the vapor deposited photoresist contains a ligand.
5. The system as claimed in claim 1 wherein the vapor deposited photoresist is a ligand around a metal center.
6. The system as claimed in claim 1 wherein the vapor deposited photoresist is a ligand bonded with a metal oxide.
7. A semiconductor wafer system comprising:
a semiconductor wafer; and
a vapor deposited photoresist over the semiconductor wafer, the vapor deposited photoresist having a top and a bottom and a different photoresist composition between the top and the bottom of the vapor deposited photoresist, the bottom being more absorbing of EUV photons from EUV radiation in a wavelength range of from 7 nanometers to 40 nanometers than the top.
8. The semiconductor wafer system as claimed in claim 7 wherein the vapor deposited photoresist is a volatile metal oxide.
9. The semiconductor wafer system as claimed in claim 7 wherein the vapor deposited photoresist includes a number of ligands and a number of metal atoms, and there is a controlled ratio of the number of ligands to the number of metal atoms to control a photoresist property.
10. The semiconductor wafer system as claimed in claim 7 wherein the vapor deposited photoresist includes a ligand.
11. The semiconductor wafer system as claimed in claim 7 wherein the vapor deposited photoresist is a ligand around a metal center.
12. The semiconductor wafer system as claimed in claim 7 wherein the vapor deposited photoresist is a ligand bonded with a metal oxide.