Plasma etching method, plasma etching device, plasma processing method, and plasma processing device
A plasma etching method includes a first step of attracting a substrate onto a monopolar electrostatic chuck in a first plasma, which is a plasma of a noble gas, and stopping generation of the first plasma after the attracting of the substrate, and a second step of etching the substrate in a second plasma, which is a plasma of a halogen-based etching gas, and stopping generation of the second plasma after the etching of the substrate. In the first step, the generation of the first plasma is stopped when a positive voltage is applied from the monopolar electrostatic chuck to the substrate. In the second step, the generation of the second plasma is stopped when a negative voltage is applied from the monopolar electrostatic chuck to the substrate.
1. A plasma etching method comprising:
a first step of attracting a substrate onto a monopolar electrostatic chuck in a first plasma, which is a plasma of a noble gas, and stopping generation of the first plasma after the attracting of the substrate; and
a second step of etching the substrate in a second plasma, which is a plasma of a halogen-based etching gas, and stopping generation of the second plasma after the etching of the substrate, wherein
in the first step, the generation of the first plasma is stopped when a positive voltage is applied from the monopolar electrostatic chuck to the substrate, and
in the second step, the generation of the second plasma is stopped when a negative voltage is applied from the monopolar electrostatic chuck to the substrate.
2. The plasma etching method according to claim 1 , wherein in the first step, before the generation of the first plasma is stopped, a polarity of a voltage applied from the monopolar electrostatic chuck to the substrate is reversed.
3. The plasma etching method according to claim 1 , wherein in the second step, before the generation of the second plasma is stopped, a polarity of a voltage applied from the monopolar electrostatic chuck to the substrate is reversed.
4. The plasma etching method according to claim 1 , wherein in the first step,
a polarity of a voltage applied to the substrate is reversed at a constant cycle, and
a period in which the first plasma is generated is set as a period that ends when the polarity is positive.
5. The plasma etching method according to claim 1 , wherein in the second step,
a polarity of a voltage applied to the substrate is reversed at a constant cycle, and
a period in which the second plasma is generated is set as a period that ends when the polarity is negative.
6. The plasma etching method according to claim 1 , wherein the noble gas is an argon gas, and the etching gas is boron trichloride.
7. A plasma etching device comprising:
a chamber;
a monopolar electrostatic chuck configured to attract a substrate in the chamber;
a first plasma generation unit configured to generate a first plasma, which is a plasma of a noble gas, in the chamber;
a second plasma generation unit configured to generate a second plasma, which is a plasma of a halogen-based etching gas, in the chamber; and
a controller configured to control driving of the monopolar electrostatic chuck, driving of the first plasma generation unit, and driving of the second plasma generation unit, wherein the controller is configured to:
drive the monopolar electrostatic chuck in the first plasma to attract the substrate onto the monopolar electrostatic chuck, and after the substrate is attracted, stop plasma generation performed by the first plasma generation unit when a positive voltage is applied from the monopolar electrostatic chuck to the substrate; and
drive the monopolar electrostatic chuck in the second plasma and stop plasma generation performed by the second plasma generation unit when a negative voltage is applied from the monopolar electrostatic chuck to the substrate.
8. A plasma processing method comprising:
a first step of attracting a substrate onto a monopolar electrostatic chuck in a first plasma, which is a plasma of a noble gas, and stopping generation of the first plasma after the attracting of the substrate; and
a second step of processing the substrate in a second plasma, which differs from the first plasma, and stopping generation of the second plasma after the processing of the substrate, wherein
in the first step, the generation of the first plasma is stopped when a positive voltage is applied from the monopolar electrostatic chuck to the substrate, and
in the second step, the generation of the second plasma is stopped when a negative voltage is applied from the monopolar electrostatic chuck to the substrate.
9. The plasma processing method according to claim 8 , wherein in the first step, before the generation of the first plasma is stopped, a polarity of a voltage applied from the monopolar electrostatic chuck to the substrate is reversed.
10. The plasma processing method according to claim 8 , wherein in the second step, before the generation of the second plasma is stopped, a polarity of a voltage applied from the monopolar electrostatic chuck to the substrate is reversed.
11. The plasma processing method according to claim 8 , wherein in the first step,
a polarity of a voltage applied to the substrate is reversed at a constant cycle, and
a period in which the first plasma is generated is set as a period that ends when the polarity is positive.
12. The plasma processing method according to claim 8 , wherein in the second step,
a polarity of a voltage applied to the substrate is reversed at a constant cycle, and
a period in which the second plasma is generated is set as a period that ends when the polarity is negative.
13. A plasma processing device comprising:
a chamber;
a monopolar electrostatic chuck configured to attract a substrate in the chamber;
a first plasma generation unit configured to generate a first plasma, which is a plasma of a noble gas, in the chamber;
a second plasma generation unit configured to generate a second plasma, which differs from the first plasma, in the chamber; and
a controller configured to control driving of the monopolar electrostatic chuck, driving of the first plasma generation unit, and driving of the second plasma generation unit, wherein
the controller is configured to:
drive the monopolar electrostatic chuck in the first plasma to attract the substrate onto the monopolar electrostatic chuck, and after the substrate is attracted, stop plasma generation performed by the first plasma generation unit when a positive voltage is applied from the monopolar electrostatic chuck to the substrate; and
drive the monopolar electrostatic chuck in the second plasma and stop plasma generation performed by the second plasma generation unit when a negative voltage is applied from the monopolar electrostatic chuck to the substrate.