Semiconductor package structure and method for manufacturing the same
A semiconductor package structure includes a conductive structure, a semiconductor element disposed on and electrically connected to the conductive structure, a supporting structure, an encapsulant, and a metal layer. The supporting structure is disposed on the conductive structure and surrounds the semiconductor element. The encapsulant covers the semiconductor element. The metal layer is disposed on or embedded in the encapsulant.
1. A semiconductor package structure, comprising:
a conductive structure;
a semiconductor element disposed on and electrically connected to the conductive structure;
a supporting structure disposed on the conductive structure and surrounding the semiconductor element;
an encapsulant covering the semiconductor element; and
a metal layer disposed on or embedded in the encapsulant, wherein the metal layer is electrically insulated from the conductive structure.
2. The semiconductor package structure according to claim 1 , wherein the conductive structure includes a redistribution layer.
3. The semiconductor package structure according to claim 1 , wherein an upper surface of the supporting structure is higher than an upper surface of the semiconductor element.
4. The semiconductor package structure according to claim 1 , wherein an upper surface of the supporting structure is substantially coplanar with an upper surface of the encapsulant.
5. The semiconductor package structure according to claim 1 , wherein the encapsulant is a polyimide or a liquid crystal polymer.
6. The semiconductor package structure according to claim 1 , further comprising a plurality of semiconductor elements including the semiconductor element, and the plurality of semiconductor elements are disposed in one through hole defined by the supporting structure.
7. The semiconductor package structure according to claim 1 , further comprising a protection layer disposed on the encapsulant and the metal layer.
8. The semiconductor package structure according to claim 1 , further comprising at least one conductive via disposed in the supporting structure.
9. The semiconductor package structure according to claim 1 , wherein the metal layer comprises an upper element disposed above the semiconductor element, the supporting structure defines a through hole, the semiconductor element is disposed in the through hole within a projection area of the upper element onto a surface of the conductive structure, and the projection area of the upper element is less than a cross-sectional area of the through hole.
10. The semiconductor package structure according to claim 1 , wherein the conductive structure includes an insulation layer and a circuit layer.
11. The semiconductor package structure according to claim 9 , wherein a coefficient of thermal expansion of the upper element is in a range of variation less than or equal to ±20% of a coefficient of thermal expansion of a circuit layer of the conductive structure.
12. The semiconductor package structure according to claim 9 , wherein a bending modulus of the upper element is in a range of variation less than or equal to ±35% of a bending modulus of a circuit layer of the conductive structure.
13. The semiconductor package structure according to claim 9 , further comprising:
a protection layer disposed on the upper element.
14. The semiconductor package structure according to claim 1 , wherein the encapsulant is disposed on the conductive structure by printing, spinning, spraying or slit coating to cover the semiconductor element.
15. A semiconductor package structure, comprising:
a conductive structure including at least one insulation layer and at least one circuit layer;
a supporting structure disposed on the conductive structure and defining at least one through hole;
at least one semiconductor element disposed in the through hole and electrically connected to the conductive structure;
an encapsulant covering the semiconductor element; and
at least one upper element disposed on or embedded in the encapsulant, wherein a coefficient of thermal expansion of the upper element is in a range of variation less than or equal to ±20% of a coefficient of thermal expansion of the circuit layer, and a bending modulus of the upper element is in a range of variation less than or equal to ±35% of a bending modulus of the circuit layer.
16. The semiconductor package structure according to claim 15 , wherein the encapsulant material has a bending modulus of greater than 5000 megapascals.
17. The semiconductor package structure according to claim 15 , wherein the encapsulant material consists essentially of a polymer.
18. The semiconductor package structure according to claim 15 , wherein the upper element is disposed above the semiconductor element, the semiconductor element is within a projection area of the upper element onto a surface of the conductive structure, and the projection area of the upper element is less than a cross-sectional area of the through hole of the supporting structure.
19. The semiconductor package structure according to claim 15 , wherein the upper element is disposed within the through hole of the supporting structure.
20. The semiconductor package structure according to claim 15 , wherein the conductive structure includes a redistribution layer, and the redistribution layer includes a plurality of circuit layers and one or more interconnection vias extending among the circuit layers.