Chip package and method for forming the same
A chip package including a first substrate having an upper surface, a lower surface and a sidewall is provided. A sensing region or device region and a conducting pad are adjacent to the upper surface. A through-hole penetrates the first substrate. A redistribution layer extends from the lower surface into the through-hole and is electrically connected to the conducting pad. The redistribution layer further laterally extends from the lower surface to protrude from the sidewall. A method for forming the chip package is also provided.
1. A chip package, comprising:
a first substrate having an upper surface, a lower surface and a sidewall;
a sensing region or device region and a conducting pad adjacent to the upper surface;
a through-hole penetrating the first substrate;
a redistribution layer extending from the lower surface into the through-hole and electrically connected to the conducting pad, wherein the redistribution layer further laterally extends from the lower surface to protrude from the sidewall; and
a second substrate, wherein the lower surface of the first substrate is disposed on the second substrate through a bonding layer.
2. The chip package as claimed in claim 1 , further comprising an insulating layer disposed between the first substrate and the redistribution layer, wherein the insulating layer laterally extends from the lower surface to protrude from the sidewall, and wherein the insulating layer has an opening exposing the redistribution layer protruding from the sidewall.
3. The chip package as claimed in claim 2 , further comprising an external conducting structure disposed in the opening and electrically connected to the redistribution layer protruding from the sidewall.
4. The chip package as claimed in claim 1 , further comprising an insulating layer, wherein the conducting pad is located in the insulating layer, and wherein the insulating layer laterally extends from the upper surface to protrude from the sidewall.
5. The chip package as claimed in claim 1 , wherein the bonding layer is filled into the through-hole.
6. The chip package as claimed in claim 1 , wherein the second substrate comprises application-specific integrated circuits or a signal processor.
7. The chip package as claimed in claim 1 , wherein the sensing region or device region comprises an element configured to sense images, biometrics or environmental characteristics.
8. The chip package as claimed in claim 1 , further comprising a side recess, wherein a sidewall of the side recess forms the sidewall of the first substrate, and wherein the side recess laterally extends along at least a partial length of a side edge of the first substrate.
9. The chip package as claimed in claim 8 , wherein the side recess laterally extends along at least an entire length of the side edge.
10. The chip package as claimed in claim 9 , wherein the side recess further extends along at least a partial length of at least one another side edge of the first substrate adjacent to the side edge.
11. The chip package as claimed in claim 1 , wherein the redistribution layer further extends to protrude from the upper surface and be electrically connected to the conducting pad.
12. A method for forming a chip package, comprising:
providing a first substrate having an upper surface, a lower surface and a sidewall, wherein a sensing region or device region and a conducting pad are adjacent to the upper surface;
forming a through-hole penetrating the first substrate;
forming a redistribution layer extending from the lower surface into the through-hole and electrically connected to the conducting pad, wherein the redistribution layer further laterally extends from the lower surface to protrude from the sidewall; and
disposing the lower surface of the first substrate on a second substrate through a bonding layer.
13. The method as claimed in claim 12 , further comprising forming an insulating layer between the first substrate and the redistribution layer, wherein the insulating layer laterally extends from the lower surface to protrude from the sidewall, and wherein the insulating layer has an opening exposing the redistribution layer protruding from the sidewall.
14. The method as claimed in claim 13 , further comprising forming an external conducting structure in the opening, wherein the external conducting structure is electrically connected to the redistribution layer protruding from the sidewall.
15. The method as claimed in claim 12 , wherein the conducting pad is located in an insulating layer, and wherein the insulating layer laterally extends from the upper surface to protrude from the sidewall.
16. The method as claimed in claim 12 , wherein the bonding layer is filled into the through-hole.
17. The method as claimed in claim 12 , wherein the second substrate comprises application-specific integrated circuits or a signal processor.
18. The method as claimed in claim 12 , wherein the sensing region or device region comprises an element configured to sense images, biometrics or environmental characteristics.
19. The method as claimed in claim 12 , further comprising forming a side recess, wherein a sidewall of the side recess forms the sidewall of the first substrate, and wherein the side recess laterally extends along at least a partial length of a side edge of the first substrate.
20. The method as claimed in claim 19 , wherein the side recess laterally extends along at least an entire length of the side edge.
21. The method as claimed in claim 20 , wherein the side recess further extends along at least a partial length of at least one another side edge of the first substrate adjacent to the side edge.
22. The method as claimed in claim 12 , wherein the redistribution layer further extends to protrude from the upper surface and be electrically connected to the conducting pad.