Touch panel and electronic device
To provide a touch panel with reduced disturbance of display and with improved mechanical strength by suppressing variation in the space between a pair of substrates which form the touch panel even when in contact with an object to be detected. A pixel portion including a plurality of pixels is provided between a pair of substrates. Each pixel includes a photosensor portion which detects that the object to be detected is in contact with one of the pair of substrates, and a MEMS portion which generates a mechanical displacement in a direction perpendicular to the pair of substrates when a signal based on a detection result of the photosensor portion is input.
1. A semiconductor device comprising:
a first substrate;
a pixel over the first substrate, the pixel comprising:
a photosensor portion comprising:
a transistor comprising an oxide semiconductor;
an insulating layer over the transistor; and
a photodiode over the insulating layer; and
a MEMS portion comprising a MEMS element;
a second substrate over the pixel; and
a processing circuit,
wherein the photosensor portion is configured to detect light from an object contacting with a surface of the second substrate to generate a first signal corresponding to the detected light,
wherein the processing circuit is configured to determine a position where the object is contacting the surface of the second substrate by the first signal to generate a second signal corresponding to the determined position, and
wherein the MEMS portion corresponding to the position is configured to generate a force in a direction perpendicular to the first substrate and the second substrate by the second signal to maintain a constant distance between the first substrate and the second substrate.
2. The semiconductor device according to claim 1 ,
wherein the photodiode comprises an n-type semiconductor layer, an i-type semiconductor layer, and a p-type semiconductor layer, and
wherein the n-type semiconductor layer, the i-type semiconductor layer, and the p-type semiconductor layer are stacked.
3. The semiconductor device according to claim 1 ,
wherein the MEMS element comprises a first electrode, a second electrode, and a hollow region between the first electrode and the second electrode.
4. The semiconductor device according to claim 1 ,
wherein the MEMS element comprises a coil and a magnet.
5. The semiconductor device according to claim 1 ,
wherein the MEMS element comprises an electrode, an insulating film, and a hollow region between the electrode and the insulating film.
6. A semiconductor device comprising:
a first substrate;
a first pixel and a second pixel over the first substrate, each of the first pixel and the second pixel comprising:
a photosensor portion comprising:
a transistor comprising an oxide semiconductor;
an insulating layer over the transistor; and
a photodiode over the insulating layer; and
a MEMS portion comprising a MEMS element;
a second substrate over the first pixel and the second pixel; and
a processing circuit,
wherein, in each of the first pixel and the second pixel, the photosensor portion is configured to detect light from an object contacting with a surface of the second substrate to generate a first signal corresponding to the detected light,
wherein the processing circuit is configured to determine a position where the object is contacting the surface of the second substrate by the first signal to generate a second signal corresponding to the determined position, and
wherein, in each of the first pixel and the second pixel, the MEMS portion corresponding to the position is configured to generate a force in a direction perpendicular to the first substrate and the second substrate by the second signal to maintain a constant distance between the first substrate and the second substrate.
7. The semiconductor device according to claim 6 ,
wherein the photodiode comprises an n-type semiconductor layer, an i-type semiconductor layer, and a p-type semiconductor layer, and
wherein the n-type semiconductor layer, the i-type semiconductor layer, and the p-type semiconductor layer are stacked.
8. The semiconductor device according to claim 6 ,
wherein, in each of the first pixel and the second pixel, the MEMS element comprises a first electrode, a second electrode, and a hollow region between the first electrode and the second electrode.
9. The semiconductor device according to claim 6 ,
wherein, in each of the first pixel and the second pixel, the MEMS element comprises a coil and a magnet.
10. The semiconductor device according to claim 6 ,
wherein, in each of the first pixel and the second pixel, the MEMS element comprises an electrode, an insulating film, and a hollow region between the electrode and the insulating film.
11. A semiconductor device comprising:
a first substrate;
a plurality of pixels arranged in matrix over the first substrate, each of the plurality of pixels comprising:
a photosensor portion comprising:
a transistor comprising an oxide semiconductor;
an insulating layer over the transistor; and
a photodiode over the insulating layer; and
a MEMS portion comprising a MEMS element;
a second substrate over the plurality of pixels; and
a processing circuit,
wherein, in each of the plurality of pixels, the photosensor portion is configured to detect light from an object contacting with a surface of the second substrate to generate a first signal corresponding to the detected light,
wherein the processing circuit is configured to determine a position where the object is contacting the surface of the second substrate by the first signal to generate a second signal corresponding to the determined position, and
wherein, in each of the plurality of pixels, the MEMS portion corresponding to the position is configured to generate a force in a direction perpendicular to the first substrate and the second substrate by the second signal to maintain a constant distance between the first substrate and the second substrate.
12. The semiconductor device according to claim 11 ,
wherein the photodiode comprises an n-type semiconductor layer, an i-type semiconductor layer, and a p-type semiconductor layer, and
wherein the n-type semiconductor layer, the i-type semiconductor layer, and the p-type semiconductor layer are stacked.
13. The semiconductor device according to claim 11 ,
wherein, in each of the plurality of pixels, the MEMS element comprises a first electrode, a second electrode, and a hollow region between the first electrode and the second electrode.
14. The semiconductor device according to claim 11 ,
wherein, in each of the plurality of pixels, the MEMS element comprises a coil and a magnet.
15. The semiconductor device according to claim 11 ,
wherein, in each of the plurality of pixels, the MEMS element comprises an electrode, an insulating film, and a hollow region between the electrode and the insulating film.