Semiconductor device
Provided is a semiconductor device including a transistor having excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) or a semiconductor device including a transistor with high reliability. In the channel width direction of a channel-etched transistor in which an oxide semiconductor film is between first and second gate electrodes, the first and second gate electrodes are connected to each other through an opening portion in first and second gate insulating films. In addition, the first and second gate electrodes surround the oxide semiconductor film in a cross-section in the channel width direction, with the first gate insulating film provided between the first gate electrode and the oxide semiconductor film and the second gate insulating film provided between the second gate electrode and the oxide semiconductor film. Furthermore, the channel length of the transistor is 0.5 μm or longer and 6.5 μm or shorter.
1. A semiconductor device comprising:
a first conductive layer;
a first insulating layer over the first conductive layer, the first insulating layer comprising a first silicon oxide film and a first silicon nitride film;
an oxide semiconductor layer over the first insulating layer;
a second insulating layer over the oxide semiconductor layer, the second insulating layer comprising a second silicon oxide film and a second silicon nitride film; and
a second conductive layer over the second insulating layer,
wherein the oxide semiconductor layer is in contact with the first silicon oxide film and the second silicon oxide film,
wherein a first opening and a second opening are provided in the first insulating layer and the second insulating layer,
wherein the oxide semiconductor layer is positioned between the first opening and the second opening, and
wherein the second conductive layer is electrically connected to the first conductive layer through the first opening and the second opening.
2. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
3. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises a c-axis aligned crystalline oxide semiconductor.
4. The semiconductor device according to claim 1 ,
wherein the first conductive layer comprises copper, and
wherein the second conductive layer comprises indium.
5. The semiconductor device according to claim 1 , further comprising a pixel electrode over the second insulating layer,
wherein the second conductive layer and the pixel electrode comprise the same transparent conductive film.
6. The semiconductor device according to claim 5 ,
wherein the pixel electrode is provided in a pixel portion, and
wherein the second conductive layer is provided in a driver circuit portion.
7. A semiconductor device comprising:
a first conductive layer;
a first insulating layer over the first conductive layer, the first insulating layer comprising a first silicon oxide film and a first silicon nitride film;
a semiconductor layer over the first insulating layer, the semiconductor layer comprising a first oxide semiconductor film and a second oxide semiconductor film;
a second insulating layer over the oxide semiconductor layer, the second insulating layer comprising a second silicon oxide film and a second silicon nitride film; and
a second conductive layer over the second insulating layer,
wherein the oxide semiconductor layer is in contact with the first silicon oxide film and the second silicon oxide film,
wherein a first opening and a second opening are provided in the first insulating layer and the second insulating layer,
wherein the semiconductor layer is positioned between the first opening and the second opening, and
wherein the second conductive layer is electrically connected to the first conductive layer through the first opening and the second opening.
8. The semiconductor device according to claim 7 , wherein one of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium, and zinc.
9. The semiconductor device according to claim 7 , wherein one of the first oxide semiconductor film and the second oxide semiconductor film comprises a c-axis aligned crystalline oxide semiconductor.
10. The semiconductor device according to claim 7 ,
wherein the first conductive layer comprises copper, and
wherein the second conductive layer comprises indium.
11. The semiconductor device according to claim 7 , further comprising a pixel electrode over the second insulating layer,
wherein the second conductive layer and the pixel electrode comprise the same transparent conductive film.
12. The semiconductor device according to claim 11 ,
wherein the pixel electrode is provided in a pixel portion, and
wherein the second conductive layer is provided in a driver circuit portion.