Heterogeneous integration using wafer-to-wafer stacking with die size adjustment

1. A method for three-dimensional wafer scale integration of heterogeneous wafers with unequal die sizes that include a first wafer and a second wafer, the method comprising:

selecting a periodicity for the second wafer to be manufactured that matches the periodicity of the first wafer;

manufacturing the second wafer in accordance with the selected periodicity;

placing, by a laser-based patterning device, a pattern in spaces between dies of the second wafer;

stacking the first wafer onto the second wafer using a bonding material; and

forming a Through-Silicon via connecting a portion of the first wafer to a portion of the second wafer.

2. The method of claim 1 , wherein said stacking step comprises:

bonding the first wafer face down onto a temporary carrier;

flipping and bonding the second wafer to the first wafer to form a wafer-to-wafer bonding;

removing the temporary carrier; and

flipping, singulating, and packaging the wafer-to-wafer bonding.

3. The method of claim 2 , wherein the first wafer comprises a plurality of dies, and the second wafer comprises another plurality of dies, and wherein said bonding step bonds the pluralities of dies in parallel.

4. The method of claim 2 , wherein said bonding step bonds the first wafer face down onto the temporary carrier using a temporary adhesive, and said removing step comprises removing the temporary adhesive.

5. The method of claim 2 , wherein a back face of the first wafer is bonded to a front face of the second wafer.

6. The method of claim 1 , wherein said stacking step comprises:

bonding the first wafer to the second wafer in a face-to-face configuration to form a wafer-to-wafer bonding; and

flipping, singulating, and packaging the wafer-to-wafer bonding.

7. The method of claim 6 , wherein said stacking step further comprises, in between said bonding step and said flipping step, thinning the first wafer using the second wafer as a handle to produce a thin first wafer in the wafer-to-wafer bonding.

8. The method of claim 6 , wherein a copper-to-copper bonding process is used to bond the first wafer to the second wafer.

9. The method of claim 6 , wherein the first wafer comprises a plurality of dies, and the second wafer comprises another plurality of dies, and wherein said bonding step bonds the pluralities of dies in parallel.

10. The method of claim 1 , wherein said placing step is performed to meet a pattern density requirement imposed on the second wafer.

11. The method of claim 1 , wherein said stacking step comprises selectively bonding the first wafer to the second wafer face-to-face or back-to-face.

12. The method of claim 1 , further comprising thinning the first wafer to form a thin first wafer used for said stacking step.

13. A non-transitory computer readable storage medium comprising a computer readable program for three-dimensional wafer scale integration of heterogeneous wafers with unequal die sizes that include a first wafer and a second wafer, wherein the computer readable program when executed on a computer causes the computer to perform the steps of:

selecting a periodicity for the second wafer to be manufactured that matches the periodicity of the first wafer;

manufacturing the second wafer in accordance with the selected periodicity;

placing, by a laser-based patterning device, a pattern in spaces between dies of the second wafer; and

stacking the first wafer onto the second wafer using a bonding material,

wherein the first wafer comprises logic circuitry, and the second wafer comprises a backside illuminated image sensor.

14. The non-transitory computer readable storage medium of claim 13 , wherein said stacking step comprises:

bonding the first wafer face down onto a temporary carrier;

flipping and bonding the second wafer to the first wafer to form a wafer-to-wafer bonding;

removing the temporary carrier; and

flipping, singulating, and packaging the wafer-to-wafer bonding.

15. The non-transitory computer readable storage medium of claim 14 , wherein the first wafer comprises a plurality of dies, and the second wafer comprises another plurality of dies, and wherein said bonding step bonds the pluralities of dies in parallel.

16. The non-transitory computer readable storage medium of claim 13 , wherein said stacking step comprises:

bonding the first wafer to the second wafer in a face-to-face configuration to form a wafer-to-wafer bonding; and

flipping, singulating, and packaging the wafer-to-wafer bonding.

17. The non-transitory computer readable storage medium of claim 16 , wherein said stacking step further comprises, in between said bonding step and said flipping step, thinning the first wafer using the second wafer as a handle to produce a thin first wafer in the wafer-to-wafer bonding.

18. The non-transitory computer readable storage medium of claim 16 , wherein the first wafer comprises a plurality of dies, and the second wafer comprises another plurality of dies, and wherein said bonding step bonds the pluralities of dies in parallel.

19. A method for three-dimensional wafer scale integration of heterogeneous wafers with unequal die sizes that include a first wafer and a second wafer, the method comprising:

selecting a periodicity for the second wafer to be manufactured that matches the periodicity of the first wafer;

manufacturing the second wafer in accordance with the selected periodicity;

placing, by a laser-based patterning device, a pattern in spaces between dies of the second wafer; and

stacking the first wafer onto the second wafer using a bonding material,

wherein the first wafer comprises logic circuitry, and the second wafer comprises a backside illuminated image sensor.