Silicon carbide semiconductor device and method of manufacturing the same
An SiC semiconductor device includes an SiC layer including a drift region forming a surface and a body region forming a part of a surface and being in contact with the drift region, a drain electrode electrically connected to a region on a side of the surface in the drift region, and a source electrode electrically connected to the body region. Main carriers which pass through the drift region and migrate between the drain electrode and the source electrode are only electrons. Z 1/2 center is introduced into the drift region at a concentration not lower than 1×10 13 cm −3 and not higher than 1×10 15 cm −3 .
1. A method of manufacturing a silicon carbide semiconductor device, comprising the steps of:
forming a silicon carbide layer including a first conductivity type region forming one surface and a second conductivity type region forming a part of the other surface opposite to the one surface and being in contact with the first conductivity type region;
heating the silicon carbide layer;
introducing Z 1/2 center into the first conductivity type region at a concentration not lower than 1×10 13 cm −3 and not higher than 1×10 15 cm −3 , the step of introducing Z 1/2 center is performed after the step of heating the silicon carbide layer;
forming a first electrode electrically connected to a region on a side of the one surface in the first conductivity type region; and
forming a second electrode electrically connected to the second conductivity type region,
main carriers which pass through the first conductivity type region and migrate between the first electrode and the second electrode being only carriers having a first conductivity type,
wherein lifetime of carriers having a second conductivity type injected from the second conductivity type region into the first conductivity type region is not longer than 1 μs.
2. The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein
in the step of introducing Z 1/2 center, the Z 1/2 center is introduced into the first conductivity type region with at least one method selected from the group consisting of electron beam irradiation, neutron irradiation, and ion implantation.
3. The method of manufacturing a silicon carbide semiconductor device according to claim 2 , wherein
in the step of introducing Z 1/2 center, the Z 1/2 center is introduced into the first conductivity type region through the electron beam irradiation in which energy of electron beams is not lower than 150 keV and not higher than 200 keV and fluence of electron beams is not lower than 5×10 16 cm −2 and not higher than 4×10 17 cm −2 .
4. A method of manufacturing a silicon carbide semiconductor device, comprising the steps of:
forming a silicon carbide layer including a first conductivity type region forming one surface and a second conductivity type region forming a part of the other surface opposite to the one surface and being in contact with the first conductivity type region;
heating the silicon carbide layer;
introducing Z1/2 center into the first conductivity type region at a concentration not lower than 1×10^13 cm^-3 and not higher than 1×10^15 cm^-3, the step of introducing Z1/2 center is performed after the step of heating the silicon carbide layer;
forming a first electrode electrically connected to a region on a side of the one surface in the first conductivity type region; and
forming a second electrode electrically connected to the second conductivity type region, main carriers which pass through the first conductivity type region and migrate between the first electrode and the second electrode being only carriers having a first conductivity type.
5. The method of manufacturing a silicon carbide semiconductor device according to claim 4 , wherein
in the step of introducing Z 1/2 center, the Z 1/2 center is introduced into the first conductivity type region with at least one method selected from the group consisting of electron beam irradiation, neutron irradiation, and ion implantation.
6. The method of manufacturing a silicon carbide semiconductor device according to claim 5 , wherein
in the step of introducing Z 1/2 center, the Z 1/2 center is introduced into the first conductivity type region through the electron beam irradiation in which energy of electron beams is not lower than 150 keV and not higher than 200 keV and fluence of electron beams is not lower than 5×10 16 cm −2 and not higher than 4×10 17 cm −2 .