Cu wiring manufacturing method and Cu wiring manufacturing system

1. A Cu wiring manufacturing method for manufacturing Cu wiring that fills a recess formed in a predetermined pattern on a surface of an interlayer insulating film of a substrate, the method comprising:

forming a MnO x film that becomes a self-formed barrier film by reaction with the interlayer insulating film at least on a surface of the recess by ALD;

forming a CuO x film that becomes a liner film on a surface of the MnO x film by CVD or ALD;

performing an annealing process on the substrate on which the CuO x film is formed and reducing the CuO x film to a Cu film by oxidation-reduction reaction between the MnO x film and the CuO x film; and

forming a Cu-based film on the Cu film obtained by reducing the CuO x film by PVD to fill the Cu-based film in the recess.

2. The Cu wiring manufacturing method of claim 1 , wherein the annealing process leads to a reduction process of the CuO x film.

3. The Cu wiring manufacturing method of claim 2 , wherein the reduction process during the annealing process is a H 2 radical process for processing a surface of the CuO x film by H 2 radicals.

4. The Cu wiring manufacturing method of claim 1 , wherein the annealing process is performed at a temperature within a range from 100° C. to 400° C.

5. The Cu wiring manufacturing method of claim 1 , wherein the MnO x film has a film thickness of 1 nm to 5 nm.

6. The Cu wiring manufacturing method of claim 1 , wherein the CuO x film has a film thickness of 1 nm to 15 nm.

7. The Cu wiring manufacturing method of claim 1 , wherein the MnO x film and the CuO x film are formed consecutively in a common processing chamber by ALD.

8. The Cu wiring manufacturing method of claim 7 , wherein a CuMnO x film is formed as a mixing layer between the MnO film and the CuO x film.

9. The Cu wiring manufacturing method of claim 1 , wherein the Cu-based film is formed by iPVD while setting a substrate temperature to 230° C. to 350° C.

10. The Cu wiring manufacturing method of claim 1 , further comprising, after said forming the Cu-based film, forming an additional Cu layer by plating or PVD and removing the Cu-based film and the MnO x film on a surface other than the recess by polishing an entire top surface.

11. A Cu wiring manufacturing system for manufacturing a Cu wiring that fills a recess formed in a predetermined pattern on a surface of an interlayer insulating film of a substrate, the system comprising:

a MnO x film forming apparatus configured to form a MnO x film that becomes a self-formed barrier film by reaction with the interlayer insulating film at least on a surface of the recess by ALD;

a CuO x film forming apparatus configured to form a CuO x film that becomes a liner film on a surface of the MnO x film by CVD or ALD;

an annealing apparatus configured to perform an annealing process on the substrate on which the CuO x film is formed and reduce the CuO x film to a Cu film by oxidation-reduction reaction between the MnO x film and the CuO x film; and

a Cu-based film forming apparatus configured to form a Cu-based film on the Cu film obtained by reducing the CuO x film by PVD and fill the Cu-based film in the recess.

12. The Cu wiring manufacturing system of claim 11 , wherein the annealing apparatus has a function of reducing the CuO x film.

13. The Cu wiring manufacturing system of claim 12 , wherein the reduction function of the annealing apparatus is performed by processing a surface of the CuO x film by H 2 radicals.

14. The Cu wiring manufacturing system of claim 11 , wherein the annealing apparatus is performed at a temperature within a range from 100° C. to 400° C.

15. The Cu wiring manufacturing system of claim 11 , wherein the MnO x film forming apparatus and the CuO x film forming apparatus are configured as film forming apparatuses including a common processing chamber, and the MnO x film formation and the CuO x film formation are consecutively performed by ALD in a state where the substrate is mounted on a mounting table in the common processing chamber.

16. The Cu wiring manufacturing system of claim 15 , wherein a CuMnO x film is formed between the MnO x film and the CuO x film in the common processing chamber.

17. The Cu wiring manufacturing system of claim 11 , wherein the Cu-based film forming apparatus forms the Cu-based film by iPVD while setting a substrate temperature to 230° C. to 350° C.

18. The Cu wiring manufacturing system of claim 11 , wherein the MnO x film formation of the MnO x film forming apparatus, the CuO x film formation of the CuO x film forming apparatus, the annealing process of the annealing apparatus, and the Cu-based film formation of the Cu-based film forming apparatus are performed without breaking a vacuum state.

19. The Cu wiring manufacturing system of claim 11 , further comprising:

a Cu plating apparatus or a Cu-PVD apparatus configured to form an additional Cu layer after the Cu-based film formation.

20. The Cu wiring manufacturing system of claim 19 , further comprising:

a polishing apparatus configured to remove the Cu-based film and the MnO x film on a surface other than the recess by polishing an entire top surface after the formation of the additional Cu layer.

21. A computer-executable storage medium storing a program for controlling a Cu wiring manufacturing system, wherein the program, when executed on a computer, controls the Cu wiring manufacturing system to perform the Cu wiring manufacturing method described in claim 1 .