Forming a gate contact in the active area
A method of making a semiconductor device includes patterning a fin in a substrate; forming a gate between source/drain regions over the substrate, the gate having a dielectric spacer along a sidewall; removing a portion of the dielectric spacer and filling with a metal oxide to form a spacer having a first spacer portion and a second spacer portion; forming a source/drain contact over at least one of the source/drain regions; recessing the source/drain contact and forming a via contact over the source/drain contact; and forming a gate contact over the gate, the gate contact having a first gate contact portion contacting the gate and a second gate contact portion positioned over the first gate contact portion; wherein the first spacer portion isolates the first gate contact portion from the source/drain contact, and the second spacer portion isolates the second gate contact portion from the source/drain contact.
1. A semiconductor device, comprising:
a fin patterned in a substrate;
a gate contact disposed over a gate positioned over the substrate, the gate contact having a first gate contact portion contacting the gate and a second gate contact portion positioned over the first portion, the second gate contact portion being wider than the first gate contact portion;
a source/drain contact disposed over a source/drain region positioned over the substrate; and
a spacer between the source/drain contact and the gate contact, the spacer comprising two different portions comprising different materials, a first spacer portion lining sidewalls of the gate, extending to a height that is over the gate, and directly contacting the first gate contact portion and the source/drain contact, and a second spacer portion arranged directly on top of the first spacer portion, directly beneath an overhanging portion of the second gate contact portion, and directly in contact with the source/drain contact.
2. The semiconductor device of claim 1 , wherein the spacer comprises a metal oxide.
3. The semiconductor device of claim 2 , wherein the metal oxide is HfO 2 , Al 2 O 3 , or a combination thereof.
4. The semiconductor device of claim 1 , wherein the gate contact comprises Al, Pt, Au, W, Ti, or any combination thereof.
5. The semiconductor device of claim 1 , wherein the second gate contact portion is wider than the first gate contact portion.
6. The semiconductor device of claim 1 , wherein the spacer has a height in a range from about 5 to about 70 nm.
7. The semiconductor device of claim 1 , wherein the first gate contact portion has a width that is substantially the same gate.
8. The semiconductor device of claim 1 , wherein the second gate spacer portion comprises an insulating metal oxide material.