Semiconductor device
Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.
1. A semiconductor device comprising:
a transistor that comprises:
a gate electrode;
a gate insulating layer over the gate electrode;
a first oxide semiconductor layer over and in contact with the gate insulating layer, the first oxide semiconductor layer being formed by an oxide target (In:Ga:Zn=1:1:1);
a second oxide semiconductor layer over and in contact with the first oxide semiconductor layer, the second oxide semiconductor layer being formed by an oxide target (In:Ga:Zn=1:3:6);
a first conductive layer in contact with a side surface of the first oxide semiconductor layer, and a side surface of the second oxide semiconductor layer; and
a second conductive layer in contact with a side surface of the first oxide semiconductor layer, and a side surface of the second oxide semiconductor layer,
wherein a thickness of the second oxide semiconductor layer is greater than 10 nm.
2. The semiconductor device according to claim 1 , further comprising an oxide layer over and in contact with the second oxide semiconductor layer.
3. The semiconductor device according to claim 1 , wherein the thickness is less than or equal to 100 nm.
4. A semiconductor device comprising:
a transistor that comprises:
a gate electrode;
a gate insulating layer over the gate electrode;
a first oxide semiconductor layer over and in contact with the gate insulating layer, the first oxide semiconductor layer being formed by an oxide target (In:Ga:Zn=1:1:1);
a second oxide semiconductor layer over and in contact with the first oxide semiconductor layer, the second oxide semiconductor layer being formed by an oxide target (In:Ga:Zn=1:3:6);
a first conductive layer in contact with a side surface of the first oxide semiconductor layer, and a side surface of the second oxide semiconductor layer; and
a second conductive layer in contact with a side surface of the first oxide semiconductor layer, and a side surface of the second oxide semiconductor layer,
wherein a thickness of the second oxide semiconductor layer is greater than 10 nm,
wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises a crystal part,
wherein each of the first conductive layer and the second conductive layer comprises copper.
5. The semiconductor device according to claim 4 , further comprising an oxide layer over and in contact with the second oxide semiconductor layer.
6. The semiconductor device according to claim 4 , wherein the thickness is less than or equal to 100 nm.
7. The semiconductor device according to claim 4 , wherein the crystal part of the first oxide semiconductor layer and the crystal part of the second oxide semiconductor layer are the same crystal structures.
8. The semiconductor device according to claim 4 , wherein the crystal part of the second oxide semiconductor layer has a c-axis substantially perpendicular to a top surface of the second oxide semiconductor layer.
9. A semiconductor device comprising:
a transistor that comprises:
a gate electrode;
a gate insulating layer over the gate electrode;
a first oxide semiconductor layer over and in contact with the gate insulating layer, the first oxide semiconductor layer being formed by an oxide target (In:Ga:Zn=1:1:1);
a second oxide semiconductor layer over and in contact with the first oxide semiconductor layer, the second oxide semiconductor layer being formed by an oxide target (In:Ga:Zn=1:3:6);
a first conductive layer in contact with a side surface of the first oxide semiconductor layer, and a side surface of the second oxide semiconductor layer; and
a second conductive layer in contact with a side surface of the first oxide semiconductor layer, and a side surface of the second oxide semiconductor layer,
wherein a thickness of the second oxide semiconductor layer is greater than 10 nm,
wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises a crystal part,
wherein each of the first conductive layer and the second conductive layer comprises a titanium layer and a copper layer over the titanium layer.
10. The semiconductor device according to claim 9 , further comprising an oxide layer over and in contact with the second oxide semiconductor layer.
11. The semiconductor device according to claim 9 , wherein the thickness is less than or equal to 100 nm.
12. The semiconductor device according to claim 9 , wherein the crystal part of the first oxide semiconductor layer and the crystal part of the second oxide semiconductor layer are the same crystal structures.
13. The semiconductor device according to claim 9 , wherein the crystal part of the second oxide semiconductor layer has a c-axis substantially perpendicular to a top surface of the second oxide semiconductor layer.