Etching method and plasma processing apparatus

1. An etching method comprising steps of:

etching a silicon oxide film formed on a substrate by using plasma in a first condition in which a surface temperature of the substrate is controlled to have a temperature lower than −35 degrees C., and the plasma is generated from a hydrogen-containing gas and a fluorine-containing gas by using first radio frequency power output from a first radio frequency power source and second radio frequency power output from a second radio frequency power source; and

etching the silicon oxide film by using the plasma in a second condition in which the output of the second radio frequency power from the second radio frequency power source is stopped,

wherein the steps of etching the silicon oxide film by using the plasma in the first condition and etching the silicon oxide film by using the plasma in the second condition are alternately repeated multiple times.

2. The etching method as claimed in claim 1 , wherein the hydrogen-containing gas includes at least one of hydrogen gas, methane gas, fluoromethane gas, difluoromethane gas, and trifluoromethane gas.

3. The etching method as claimed in claim 1 , wherein the second radio frequency power has a surface power density value of 1.4 W/cm 2 .

4. The etching method as claimed in claim 1 , wherein the first radio frequency power and the second radio frequency power are applied to a pedestal that supports the substrate.

5. A etching method comprising steps of:

etching a silicon oxide film formed on a substrate by using plasma in a first condition in which a surface temperature of the substrate is controlled to have a temperature lower than −35 degrees C., and the plasma is generated from a hydrogen-containing gas and a fluorine-containing gas by using first radio frequency power output from a first radio frequency power source and second radio frequency power output from a second radio frequency power source; and

etching the silicon oxide film by using the plasma in a second condition in which the output of the first radio frequency power from the first radio frequency power source and the output of the second radio frequency power from the second radio frequency power source are stopped,

wherein steps of etching the silicon oxide film by using the plasma in the first condition and etching the silicon oxide film by using the plasma in the second condition are alternately repeated multiple times.

6. The etching method as claimed in claim 5 , wherein the hydrogen-containing gas includes at least one of hydrogen gas, methane gas, fluoromethane gas, difluoromethane gas, and trifluoromethane gas.

7. The etching method as claimed in claim 5 , wherein the second radio frequency power has a surface power density value of 1.4 W/cm 2 .

8. An etching method comprising steps of:

mounting a substrate on a pedestal, said substrate having a silicon oxide film formed thereon,

controlling a temperature of the substrate on which the silicon oxide film is formed to be lower than −35 degrees C.;

supplying a hydrogen-containing gas and a fluorine-containing gas in a chamber;

generating plasma of the hydrogen-containing gas and the fluorine-containing gas by applying first radio frequency power;

etching the silicon oxide film on the substrate by controlling to alternately apply and stop second radio frequency power as bias electric power for the substrate multiple times.

9. The etching method as claimed in claim 8 , wherein the first radio frequency power is continuous wave.

10. The etching method as claimed in claim 8 , wherein the first radio frequency power is pulse wave.

11. The etching method as claimed in claim 10 , wherein the method further include controlling the first radio frequency power and the second radio frequency power in synchronization with each other.

12. The etching method as claimed in claim 8 , wherein the second radio frequency power is applied for 30 seconds or less.

13. The etching method as claimed in claim 8 , wherein the second radio frequency power is stopped for 5 seconds or more.

14. The etching method as claimed in claim 8 , wherein the second radio frequency power is stopped for less than 10 seconds.

15. The etching method as claimed in claim 8 , wherein the etching is performed so as to achieve an aspect ratio of 20 or higher.

16. The etching method as claimed in claim 8 , wherein the first radio frequency power and the second radio frequency power are applied to the pedestal.

17. The etching method as claimed in claim 8 , wherein the second radio frequency power has a surface power density value of 1.4 W/cm 2 .

18. The etching method as claimed in claim 8 , wherein the controlling the second radio frequency power and a controlling pressure of a heat transfer gas that is supplied to an opposite side of the substrate relative to the silicon oxide film are performed according to a temperature change of the substrate.

19. The etching method as claimed in claim 18 , wherein the method further include controlling the second radio frequency power to be applied upon detecting that the temperature of the substrate is lower than −35 degrees C.

20. The etching method as claimed in claim 8 , wherein the method further include predicting the temperature of the substrate by measuring a temperature of a focus ring that is provided at a periphery of the substrate.

21. The etching method as claimed in claim 8 , wherein the second radio frequency power is pulse wave.