Semiconductor manufacturing process and package carrier
A package carrier includes a carrier and a light absorption layer. The light absorption layer is disposed on the carrier. The light absorption layer includes a notch at the periphery of the carrier, and the notch is light transmissive so as to expose the carrier to light in a normal direction of the carrier. A semiconductor manufacturing process is also provided.
1. A semiconductor manufacturing process comprising:
providing a carrier;
coating the carrier with a light absorption layer; and
removing a portion of the light absorption layer at a periphery of the carrier to form a notch in the light absorption layer at the periphery of the carrier, and the light absorption layer remained directly below the notch has at least 10 percent of light transmittance so as to expose the carrier to light in a normal direction of the carrier.
2. The semiconductor manufacturing process as claimed in claim 1 , further comprising:
providing a semiconductor layer on the light absorption layer.
3. The semiconductor manufacturing process as claimed in claim 1 , further comprising:
debonding the light absorption layer from the carrier.
4. The semiconductor manufacturing process as claimed in claim 1 , wherein in the step of removing the portion of the light absorption layer, the portion of the light absorption layer is completely removed in the normal direction to the carrier so as to expose a surface of the carrier.
5. The semiconductor manufacturing process as claimed in claim 1 , wherein in the step of removing the portion of the light absorption layer, the portion of the light absorption layer is partially removed in the normal direction so that the light absorption layer remained directly below the notch has 10 to 90 percent of light transmittance.
6. The semiconductor manufacturing process as claimed in claim 1 , wherein the light absorption layer includes a colorant, and the colorant absorbs infrared laser wavelengths.
7. A semiconductor manufacturing process comprising:
providing a carrier;
disposing a cover at a periphery of the carrier;
coating the carrier with a first light absorption layer; and
removing the cover from the carrier to reveal a notch at the periphery of the carrier, and the carrier is exposed to light in a normal direction of the carrier at the notch.
8. The semiconductor manufacturing process as claimed in claim 7 , wherein prior to disposing the cover at a periphery of the carrier, the semiconductor manufacturing process further comprises:
coating the carrier with a second light absorption layer, and the second light absorption layer is formed with at least 10 percent of light transmittance by adjusting a thickness of the second light absorption layer.
9. The semiconductor manufacturing process as claimed in claim 7 , further comprising:
providing a semiconductor layer on the first light absorption layer.
10. The semiconductor manufacturing process as claimed in claim 7 , further comprising:
providing a semiconductor package on the first light absorption layer; and
debonding the first light absorption layer from the carrier.
11. The semiconductor manufacturing process as claimed in claim 7 , wherein the notch at the periphery of the carrier exposes a surface of the carrier.
12. The semiconductor manufacturing process as claimed in claim 8 , wherein the second light absorption layer is of 10 to 90 percent of light transmittance.
13. The semiconductor manufacturing process as claimed in claim 7 , wherein the light absorption layer includes a colorant, and the colorant absorbs infrared laser wavelengths.
14. A semiconductor manufacturing process comprising:
providing a carrier;
forming a light absorption layer fully covering a surface of the carrier;
thinning a portion of the light absorption layer located at a periphery part of the carrier to form a notch, so that a thickness of the light absorption layer at the notch is less than a thickness of the rest of the light absorption layer, wherein the thinned portion of the light absorption layer at the notch has 10 to 90 percent of light transmittance; and
providing a semiconductor layer on the light absorption layer using the notch as an alignment mark for exposing the carrier to light.
15. The semiconductor manufacturing process as claimed in claim 14 , further comprising debonding the light absorption layer from the carrier.
16. The semiconductor manufacturing process as claimed in claim 14 , further comprising removing the thinned portion of the light absorption layer until the notch exposes the surface of the carrier, so that the carrier at the notch is exposed to the light.
17. The semiconductor manufacturing process as claimed in claim 16 , wherein the semiconductor layer is provided on the light absorption layer and covering the surface of the carrier that is exposed by the notch.
18. The semiconductor manufacturing process as claimed in claim 14 , wherein laser is applied to thin a portion of the light absorption layer.
19. The semiconductor manufacturing process as claimed in claim 14 , wherein the light absorption layer includes a colorant, and the colorant absorbs infrared laser wavelengths.
20. The semiconductor manufacturing process as claimed in claim 14 , wherein the light absorption layer is formed by coating.