Systems and methods for improving imaging by sub-pixel calibration

1. A radiation detector assembly comprising:

a semiconductor detector having a surface;

plural pixelated anodes disposed on the surface, the pixelated anodes configured to generate primary signals responsive to reception of photons by the pixelated anodes and to generate secondary signals responsive to induced charges caused by reception of photons by at least one adjacent anode; and

at least one processor operably coupled to the pixelated anodes, the at least one processor configured to:

define sub-pixels for each pixelated anode, the sub-pixels defined using a predetermined grid defined across the surface, the predetermined grid defined independently of a depth of interaction of acquired events;

acquire signals comprising the primary signals and the secondary signals corresponding to acquisition events from the pixelated anodes;

determine sub-pixel locations for the acquisition events using the signals; and

apply at least one calibration parameter on a per sub-pixel basis for the acquisition events based on the determined sub-pixel locations.

2. The radiation detector assembly of claim 1 , wherein the at least one calibration parameter comprises a sub-pixel adjustment parameter for each sub-pixel that is independently determined for each sub-pixel.

3. The radiation detector assembly of claim 1 , wherein the at least one processor is configured to apply the sub-pixel adjustment parameter to each sub-pixel before combining sub-pixel signals for corresponding pixels.

4. The radiation detector assembly of claim 1 , wherein the at least one calibration parameter comprises a sensitivity calibration parameter.

5. The radiation detector assembly of claim 1 , wherein the at least one calibration parameter comprises a sub-pixel count parameter for each sub-pixel, wherein the at least one processor is configured to adjust a total number of counts for acquisition events for each sub-pixel using the corresponding sub-pixel count parameter.

6. The radiation detector assembly of claim 1 , wherein the at least one processor is configured to apply a uniformity map calibration to the signals.

7. The radiation detector assembly of claim 1 , wherein the at least one calibration parameter comprises at least one energy calibration parameter, and wherein at least one processor is configured to:

generate a sub-pixel energy spectrum for each sub-pixel, using the primary signals, to produce sub-pixel energy spectra;

apply at least one energy calibration parameter to adjust the sub-pixel energy spectra for each pixelated anode to produce calibrated sub-pixel energy spectra; and

for each pixelated anode, combine the calibrated sub-pixel energy spectra to provide a pixelated anode spectrum.

8. The detector assembly of claim 7 , wherein the at least one processor is configured to align respective peaks of the sub-pixel energy spectra for each pixelated anode using the at least one energy calibration parameter.

9. The detector assembly of claim 7 , wherein the at least one energy calibration parameter is selected from a group of parameters comprising a gain and an offset, wherein applying the gain adjusts a position and a breadth of a peak of an energy spectrum being adjusted and applying the offset shifts a peak location of the spectrum being adjusted.

10. A method of imaging using a semiconductor detector having a surface with plural pixelated anodes disposed thereon, the pixelated anodes configured to generate primary signals responsive to reception of photons by the pixelated anodes and to generate secondary signals responsive to an induced charges caused by reception of photons by at least one adjacent anodes the method comprising:

defining, with at least one processor operably coupled to the pixelated anodes, sub-pixels for each pixelated anode, the sub-pixels defined using a predetermined grid defined across the surface, the predetermined grid defined independently of a depth of interaction of acquired events;

acquiring, with the at least one processor, signals comprising the primary and secondary signals corresponding to acquisition events from the pixelated anodes;

determining, with the at least one processor, sub-pixel locations for the acquisition events using the signals; and

applying, with the at least one processor, at least one calibration parameter on a per-sub-pixel bases for the acquisition events based on the determined sub-pixel locations.

11. The method of claim 10 , wherein the at least one calibration parameter comprises a sub-pixel adjustment parameter for each sub-pixel that is independently determined for each sub-pixel.

12. The method of claim 10 , further comprising applying the sub-pixel adjustment parameter to each sub-pixel before combining sub-pixel signals for corresponding pixels.

13. The method of claim 10 , wherein the at least one calibration parameter comprises a sensitivity calibration parameter.

14. The method of claim 10 , wherein the at least one calibration parameter comprises a sub-pixel count parameter for each sub-pixel, wherein the method further comprises adjusting a total number of counts for acquisition events for each sub-pixel using the corresponding sub-pixel count parameter.

15. The method of claim 10 , further comprising applying a uniformity map calibration to the signals.

16. The method of claim 10 , wherein the at least one calibration parameter comprises at least one energy calibration parameter, the method further comprising:

generating a sub-pixel energy spectrum for each sub-pixel, using the primary signals, to produce sub-pixel energy spectra;

applying at least one energy calibration parameter to adjust the sub-pixel energy spectra for each pixelated anode to produce calibrated sub-pixel energy spectra; and

for each pixelated anode, combining the calibrated sub-pixel energy spectra to provide a pixelated anode spectrum.

17. A method of providing a radiation detector assembly comprising:

providing a semiconductor detector having a surface with plural pixelated anodes disposed thereon, the pixelated anodes configured to generate primary signals responsive to reception of photons by the pixelated anodes and to generate secondary signals responsive to induced charges caused by reception of photons by at least one adjacent anode;

operably coupling the pixelated anodes to at least one processor;

defining, with the at least one processor, sub-pixels for each pixelated anode, the sub-pixels defined using a predetermined grid defined across the surface, the predetermined grid defined independently of a depth of interaction of acquired events;

providing a calibrated radiation supply to the semiconductor detector, wherein the pixelated anodes generate calibrated signals comprising calibrated primary signals and calibrated secondary signals responsive to the calibrated radiation supply;

acquiring, with the at least one processor, the calibrated signals from the pixelated anodes;

determining sub-pixel locations for calibration acquisition events using the calibrated signals generated responsive to the calibrated radiation supply;

determining a non-calibrated value for each sub-pixel;

determining at least one calibration parameter to adjust the non-calibrated value for each sub-pixel to a desired value; and

applying the at least one determined calibration parameter to the non-calibrated value for each sub-pixel to generate a calibrated value for each sub-pixel.

18. The method of claim 17 , wherein the at least one calibration parameter comprises a sensitivity calibration parameter.

19. The method of claim 17 , wherein the at least one calibration parameter comprises a sub-pixel count parameter for each sub-pixel, wherein the method further comprises adjusting a total number of non-calibrated counts for acquisition events for each sub-pixel using the corresponding sub-pixel count parameter.

20. The method of claim 17 , further comprising applying a uniformity map calibration to the signals.