Copper via with barrier layer and cap layer
A semiconductor device includes an insulating interlayer on a first region of a substrate. The insulating interlayer has a recess therein and includes a low-k material having porosity. A damage curing layer is formed on an inner surface of the recess. A barrier pattern is formed on the damage curing layer. A copper structure fills the recess and is disposed on the barrier pattern. The copper structure includes a copper pattern and a copper-manganese capping pattern covering a surface of the copper pattern. A diffusion of metal in a wiring structure of the semiconductor device may be prevented, and thus a resistance of the wiring structure may decrease.
1. A semiconductor device, comprising:
a substrate;
an insulating interlayer on an upper surface of the substrate, the insulating interlayer having a recess therein and including a low-k material having porosity;
a damage curing layer on an entire inner surface of the recess without being in direct contact with the upper surface of the substrate;
a barrier pattern on the damage curing layer; and
a copper structure filling the recess having the barrier pattern therein, the copper structure including a copper pattern and a copper-manganese capping pattern covering a surface of the copper pattern,
wherein the barrier pattern and the damage curing layer are formed of different materials; and
wherein the copper-manganese capping pattern is formed on an upper surface and a sidewall of the copper pattern, the copper-manganese capping pattern enclosing the copper pattern.
2. The semiconductor device of claim 1 ,
wherein the insulating interlayer includes Si—O bonds, and some oxygen atoms of the Si—O bonds in the insulating interlayer are substituted by a methyl group (CH3).
3. The semiconductor device of claim 1 ,
wherein the damage curing layer has a porosity lower than a porosity of the insulating interlayer.
4. The semiconductor device of claim 1 ,
wherein the damage curing layer includes an insulating material having Si—C bonds, and
a density of the Si—C bonds in the damage curing layer is higher than a density of Si—C bonds in the insulating interlayer.
5. The semiconductor device of claim 1 ,
wherein a portion of the barrier pattern on a sidewall of the recess has a thickness less than a thickness of a portion of the barrier pattern on a bottom of the recess.
6. The semiconductor device of claim 1 ,
wherein the copper-manganese capping pattern has a thickness of about 0.1 nm to about 10 nm.
7. The semiconductor device of claim 1 ,
wherein a portion of the copper-manganese capping pattern on an upper central portion of the copper pattern has a first thickness, and a portion of the copper-manganese capping pattern on an upper edge portion of the copper pattern has a second thickness greater than the first thickness.
8. The semiconductor device of claim 1 ,
wherein the copper-manganese capping pattern is formed on an upper surface of the copper pattern.
9. The semiconductor device of claim 1 ,
wherein an amount of manganese in a portion of the copper-manganese capping pattern on the sidewall of the copper pattern is less than an amount of manganese in a portion of the copper-manganese capping pattern on the upper surface of the copper pattern.
10. A semiconductor device, comprising:
a substrate;
an insulating interlayer on an upper surface of the substrate, the insulating interlayer including a low-k material having porosity;
a recess disposed in the insulating interlayer, a bottom of the recess being disposed higher than the upper surface of the substrate and the bottom of the recess covering the upper surface of the substrate;
a barrier pattern on a sidewall of the recess and the bottom of the recess, a portion of the barrier pattern layer on the sidewall of the recess having a thickness less than a thickness of a portion of the barrier pattern on the bottom of the recess and the barrier pattern entirely covering the sidewall of the recess and the bottom of the recess;
a copper structure filling the recess having the barrier pattern therein, the copper structure including a copper pattern and a copper-manganese capping pattern covering a surface of the copper pattern; and
wherein the copper-manganese capping pattern is formed on an upper surface and a sidewall of the copper pattern, the copper-manganese capping pattern enclosing the copper pattern.
11. The semiconductor device of claim 10 ,
wherein the copper pattern includes manganese of 0.005 wt % to 5 wt %, and the copper-manganese capping pattern includes manganese having a weight percentage higher than a weight percentage of manganese in the copper pattern.
12. The semiconductor device of claim 11 ,
wherein the copper-manganese capping pattern includes manganese of 0.1 wt % to 80 wt %.
13. The semiconductor device of claim 10 ,
wherein the copper-manganese capping pattern is formed on an upper surface, a sidewall and a bottom of the copper pattern, and wherein a portion of the copper-manganese capping pattern on an upper central portion of the copper pattern has a first thickness, and a portion of the copper-manganese capping pattern on an upper edge portion of the copper pattern has a second thickness greater than the first thickness.
14. The semiconductor device of claim 10 , further comprising a damage curing layer between the barrier pattern and the insulating interlayer, the damage curing layer having a porosity lower than a porosity of the insulating interlayer.
15. A semiconductor device, comprising:
a first insulating interlayer on a substrate, the first insulating interlayer having a via hole therethrough;
a second insulating interlayer including a low-k material having porosity and having a trench therethrough, the trench being in communication with the via hole and extending in a first direction;
a damage curing layer on inner surfaces of the via hole and the trench;
a barrier pattern on the damage curing layer, wherein the barrier pattern is formed of metal or metal nitride;
a copper structure on the barrier pattern to fill the via hole and the trench, the copper structure including a copper pattern and a copper-manganese capping pattern covering a surface of the copper pattern; and
wherein the copper-manganese capping pattern is formed on an upper surface and a sidewall of the copper pattern, the copper-manganese capping pattern enclosing the copper pattern.
16. The semiconductor device of claim 15 ,
wherein the damage curing layer has a porosity lower than porosities of the first and second insulating interlayers.
17. The semiconductor device of claim 15 ,
wherein the damage curing layer includes an insulating material having Si—C bonds, and a density of the Si—C bonds in the damage curing layer is higher than a density of Si—C bonds in each of the first and second insulating interlayers.
18. The semiconductor device of claim 15 , wherein the copper-manganese capping pattern has a thickness of about 0.10 nm to about 10 nm.
19. The semiconductor device of claim 15 ,
wherein a portion of the copper-manganese capping pattern on an upper central portion of the copper pattern has a first thickness, and a portion of the copper-manganese capping pattern on an upper edge portion of the copper pattern has a second thickness greater than the first thickness.