Light emitting device
A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.
1. A light emitting device, comprising:
a base substrate;
a submount substrate comprising a first bonding pad and a second bonding pad;
a first light emitting cell disposed on the base substrate and a second light emitting cell disposed on the base substrate, wherein the first and second light emitting cells comprise:
a first semiconductor layer and a second semiconductor layer;
an active layer disposed between the first and the second semiconductor layers; and
a first inclined surface;
a first metal bump configured to bond the second semiconductor layer of the first light emitting cell to the first bonding pad of the submount substrate;
a second metal bump configured to bond the second semiconductor layer of the second light emitting cell to the second bonding pad of the submount substrate; and
a wire connecting the first semiconductor layer of the first light emitting cell to the second semiconductor layer of the second light emitting cell,
wherein the first inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane of the substrate.
2. The light emitting device of claim 1 , further comprising:
a third metal bump configured to bond the first semiconductor layer of the first light emitting cell to the submount substrate;
a fourth metal bump configured to bond the first semiconductor layer of the second light emitting cell to the submount substrate;
a third bonding pad disposed on the submount substrate; and
a fourth bonding pad disposed on the submount substrate,
wherein the third metal bump is configured to bond the first semiconductor layer of the first light emitting cell with the third bonding pad, and
wherein the fourth metal bump is configured to bond the first semiconductor layer of the second light emitting cell with the fourth bonding pad.
3. The light emitting device of claim 2 , wherein the first semiconductor layer of the first light emitting cell and the first semiconductor layer of the second light emitting layer comprises a shared layer.
4. The light emitting device of claim 1 , wherein:
the first inclined surface of the first light emitting cell comprises the second semiconductor layer and the active layer of the first light emitting cell,
the first inclined surface of the second light emitting cell comprises the second semiconductor layer and the active layer of the second light emitting cell,
the first and second light emitting cell further comprises a second inclined surface comprising the second semiconductor layer and the active layer, and
the second inclined surface has a slope of approximately 20° to approximately 80° from the horizontal plane of the substrate.