Solid state lighting devices with dielectric insulation and methods of manufacturing
Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.
1. A solid state lighting device, comprising:
a solid state lighting structure having:
a first semiconductor material;
a second semiconductor material spaced apart from the first semiconductor material;
an active region between the first and second semiconductor materials and having a topmost surface;
an indentation defining sidewalls extending through the active region and at least partially through the first semiconductor material;
a conductive material over and in contact with the second semiconductor material; and
an insulating material in the indentation of the solid state lighting structure and electrically insulating at least a portion of the first semiconductor material from the second semiconductor material,
wherein the second semiconductor material includes a first portion in contact with the topmost surface of the active region and a second portion between the sidewalls of the indentation and separated from the active region.
2. The solid state lighting device of claim 1 wherein:
the topmost surface of the active region faces away from the first semiconductor material and toward the conductive material.
3. The solid state lighting device of claim 1 wherein:
the topmost surface of the active region faces away from the first semiconductor material; and
the insulating material is between at least a portion of the first semiconductor material and the second semiconductor material and between the active region and at least a portion of the second semiconductor material.
4. The solid state lighting device of claim 1 wherein the insulating material includes a continuous upper surface having a portion above or generally coplanar with the topmost surface of the active region.
5. The solid state lighting device of claim 4 wherein the portion of the continuous upper surface is a first portion, and wherein the insulating material further includes a second portion below the topmost surface of the active region and in contact with the second portion of the second semiconductor material.
6. The solid state lighting device of claim 1 wherein the conductive material is over substantially all of the second semiconductor material.
7. The solid state lighting device of claim 1 wherein the topmost surface of the active region corresponds to a first plane, and wherein the first portion of the second semiconductor material is above the first plane and the second portion of the second semiconductor material is below the first plane.
8. The solid state lighting device of claim 1 wherein the second portion of the second semiconductor material is in contact with the insulating material in the indentation.