Semiconductor device and method for manufacturing the same
A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode.
1. A semiconductor device comprising:
a substrate having an insulating surface;
a first electrode and a second electrode over the insulating surface, each of the first electrode and the second electrode comprising a first conductive layer and a second conductive layer;
a first semiconductor layer that has a light-transmitting property and is electrically connected to the first electrode and the second electrode;
a first wiring electrically connected to the first electrode;
a second semiconductor layer that has a light-transmitting property and over the first wiring;
an insulating layer over the first semiconductor layer;
a third electrode over the insulating layer, the third electrode having a light-transmitting property; and
a second wiring electrically connected to the third electrode,
wherein the second semiconductor layer overlaps with the first wiring where the second wiring intersects with the first wiring,
wherein the first wiring and the second wiring overlap with each other,
wherein the third electrode overlaps with the first semiconductor layer, and
wherein each of the first wiring and the second wiring has a light-shielding property.
2. The semiconductor device according to claim 1 , wherein the first conductive layer has a light-transmitting property.
3. The semiconductor device according to claim 1 , wherein the insulating layer is a gate insulating layer between the first semiconductor layer and the third electrode.
4. The semiconductor device according to claim 1 , wherein a lower surface of the first semiconductor layer is in contact with the first electrode and the second electrode.
5. The semiconductor device according to claim 1 , wherein the third electrode is a gate electrode.
6. The semiconductor device according to claim 1 ,
wherein each of the first semiconductor layer and the second semiconductor layer comprises an oxide semiconductor containing indium, gallium, and zinc.