Method for fabricating fin-shaped structure and bump made of different material
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a first fin-shaped structure and a bump are formed on the substrate, and an insulating layer is formed on the bump and around the first fin-shaped structure. Next, a part of the first fin-shaped structure is removed, an epitaxial layer is formed on the first fin-shaped structure, part of the epitaxial layer is removed, and part of the insulating layer is removed to form a shallow trench isolation (STI) and a second fin-shaped structure protruding from the STI. Preferably, the second fin-shaped structure includes a top portion and a bottom portion, in which the bottom portion and the bump are made of same material.
1. A method for fabricating a semiconductor device, comprising:
providing a substrate having a first region and a second region;
forming a first fin-shaped structure and a bump on the first region of the substrate, wherein the first fin-shaped structure and the bump comprise different material, the first fin-shaped structure comprises a top portion and a bottom portion, and the top portion and the bottom portion comprise different material;
forming a second fin-shaped structure and the bump on the substrate;
forming an insulating layer on the bump and around the second fin-shaped structure;
removing part of the second fin-shaped structure;
forming an epitaxial layer on the remaining second fin-shaped structure after removing part of the second fin-shaped structure;
planarizing the epitaxial layer; and
removing part of the insulating layer to form a shallow trench isolation (STI) on the bump and the first fin-shaped structure protruding from the STI, wherein a top surface of the bottom portion is lower than a top surface of the STI on both the first region and the second region and higher than a top surface of the bump.
2. The method of claim 1 , further comprising forming a dislocation in a bottom portion of the epitaxial layer.
3. A method for fabricating a semiconductor device, comprising:
providing a substrate;
forming a first fin-shaped structure and a bump on the substrate;
forming an insulating layer on the bump and around the first fin-shaped structure;
removing part of the first fin-shaped structure;
forming an epitaxial layer on the remaining first fin-shaped structure after removing part of the first fin-shaped structure;
planarizing the epitaxial layer; and
removing part of the insulating layer to form a shallow trench isolation (STI) and a second fin-shaped structure protruding from the STI, wherein the second fin-shaped structure and the bump comprise different material, the second fin-shaped structure comprises a top portion and a bottom portion, the top portion and the bottom portion comprise different material, and a top surface of the bottom portion is lower than a top surface of the STI and higher than a top surface of the bump.