Arrangement and method for manufacturing the same
An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration.
1. A method for forming a die in a substrate, comprising:
providing the substrate having a front side and a back side, the front side defining one or more die regions within the substrate; wherein each of the one or more die regions comprises a plurality of insulating barriers extending through the die region;
forming a multi-purpose layer defining a back side of the die region; wherein the multi-purpose layer is formed of an ohmic material; and
forming an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate; wherein the etch stop layer is of a first conductivity type of a first doping concentration; and
mechanically thinning the substrate from the back side thereof to the etch stop layer.
2. The method of claim 1 , further comprising:
etching the substrate from the back side thereof using the etch stop layer as an etch stop.
3. The method of claim 1 , further comprising:
etching selectively at least a portion of the etch stop layer using the multi-purpose layer as an etch stop.
4. The method of claim 3 , further comprising:
wherein discrete contacts formed of ohmic material remain following etching selectively at least a portion of the multi-purpose layer.
5. The method of claim 1 , further comprising:
forming the multi-purpose layer and the etch stop layer as a double peak distribution.
6. The method of claim 1 , further comprising:
forming trenches into the substrate between die regions;
wherein an encapsulation material is formed at least partially on sidewalls of the trenches.
7. The method of claim 6 , further comprising:
removing wafer material from the back side of the substrate to at least partially expose the encapsulation material formed in the trenches, so that the encapsulation material mechanically holds a plurality of dies within the die regions.
8. The method of claim 1 , wherein at least one of the die regions further comprises at least two electronic components separated by the plurality of insulating barriers.
9. A method for manufacturing an arrangement, the method comprising:
forming a die region in a substrate having a front side and a back side; wherein the die region comprises a plurality of insulating barriers extending through the die region;
forming a multi-purpose layer defining a back side of the die region;
forming an etch stop layer disposed over the multi-purpose between the multi-purpose layer and the back side of the substrate;
forming at least one back side terminal on a backside of the die region from the multi-purpose layer;
forming at least one front side terminal on a front side of the die region; and
forming encapsulation material over the front side of the substrate covering the die region;
wherein the multi-purpose layer is formed of an ohmic material; and
wherein the etch stop layer is of a first conductivity type of a first doping concentration.
10. The method of claim 9 , wherein the etch stop layer a silicon on insulator structure.