Film deposition material, sealing film using the same and use thereof
The present invention relates to a film composed of a carbon-containing silicon oxide formed by CVD using, as the raw material, an organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom, which is used as a sealing film for a gas barrier equipment and materials, an FPD device, a semiconductor device and the like.
1. A method for producing a gas barrier sealing film, which comprises:
supplying oxygen and forming a gas barrier sealing film on a plastic substrate by a plasma enhanced chemical vapor deposition performed at 1.0 to 10,000 W using an organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom, the organosilicon compound being represented by the following formula (2):
wherein each of R 5 and R 6 represents a hydrocarbon group having a carbon number of 1 to 20, R 5 and R 6 may bond with each other to form a cyclic structure; R 7 represents a branched saturated hydrocarbon group having a carbon number of 1 to 20; R 8 represents a linear saturated hydrocarbon group having a carbon number of 1 to 20, and m represents an integer of 1 to 20,
wherein flow rate of oxygen is the same as or more than flow rate of the organosilicon compound and the gas barrier sealing film has a water permeability of 3.5×10 −3 g/m 2 ·day or less.
2. The method for producing a gas barrier sealing film according to claim 1 , wherein the organosilicon compound represented by the formula (2) is diisopropylmethylsilane, sec-butyldimethylsilane or di-sec-butylmethylsilane.
3. The method for producing a gas barrier sealing film according to claim 1 , wherein the organosilicon compound represented by the formula (2) is diisopropylmethylsilane.
4. The method for producing a gas barrier sealing film according to claim 2 , wherein the organosilicon compound represented by the formula (2) is diisopropylmethylsilane.
5. The method for producing a gas barrier sealing film according to claim 1 , wherein flow rate of oxygen is 1 to 10 times flow rate of the organosilicon compound.
6. The method for producing a gas barrier sealing film according to claim 2 , wherein flow rate of oxygen is 1 to 10 times flow rate of the organosilicon compound.
7. The method for producing a gas barrier sealing film according to claim 3 , wherein flow rate of oxygen is 1 to 10 times flow rate of the organosilicon compound.
8. The method for producing a gas barrier sealing film according to claim 4 , wherein flow rate of oxygen is 1 to 10 times flow rate of the organosilicon compound.