Aluminum nitride electrostatic chuck used in high temperature and high plasma power density semiconductor manufacturing process
View Patent ↗Disclosed is an aluminum nitride electrostatic chuck, comprising: a positioning electrostatic chuck and a carrier structure. The positioning electrostatic chuck includes a groove structure layer, a dielectric insulation layer, and a heat conduction layer. In the groove structure layer on the surface of the electrostatic chuck is provided with cooling gas channels, to facilitate control of the temperature distribution of a wafer. The electrostatic chuck is especially designed for use in a semiconductor manufacturing process of high temperature and high plasma power density. The dielectric insulation layer is provided with embedded electrodes, such that voltage conversion can be carried out to effect wafer absorption/release. The cooling gas channels are used to control temperature of the absorbed wafer, by means of heat conduction of aluminum nitride electrostatic chuck. Therefore, wafer temperature distribution is controlled through aspect ratio and geometry of cooling gas channel.
1. An aluminum nitride electrostatic chuck used in high temperature and high plasma power density semiconductor manufacturing process, which includes:
a positioning electrostatic chuck, with its whole set formed by sintering of aluminum nitride, comprising:
a groove structure layer, with its surface provided with cooling gas channels, having width 2 mm and depth of 20 to 100 μm, is used to absorb/release wafer, and control heat distribution of the absorbed wafer;
a dielectric insulation layer, having one or more embedded high voltage electrodes, wherein the electrode includes electric conduction metal composite material, used to provide voltage to produce electrostatic force to absorb wafer;
a heat conduction layer, having embedded water channels, to enhance temperature reduction of wafer; and
a carrier structure, made of metal, and is disposed below the positioning electrostatic chuck as a support for the positioning electrostatic chuck.
2. The aluminum nitride electrostatic chuck used in high temperature and high plasma power density semiconductor manufacturing process as claimed in claim 1 , wherein the one or more high voltage electrodes embedded in the dielectric insulation layer includes an electric conduction metal composite material, while voltage applied is in a range of 2.0 Kv to 3.0 Kv.