Bonding wire for high-speed signal line

1. A bonding wire for a high-speed signal line for connecting a pad electrode of a semiconductor device and a lead electrode on a circuit board, consisting essentially of:

a trace additive element;

0.8 to 2.5 mass % of palladium (Pd),

0.1 to 0.7 mass % of platinum (Pt); and

a remaining being silver (Ag) with purity of 99.99 mass % or more,

wherein the bonding wire comprises a core and a skin region in a doughnut shape segregated on the core so that a high purity silver segregation layer covers a lower purity silver on a surface of the bonding wire, and

the skin region contains an alloy having a higher content of silver (Ag) than a content of silver (Ag) in the core to thereby transmit super-high frequency.

2. The bonding wire for the high-speed signal line according to claim 1 , wherein the skin region is a surface segregation layer.

3. A bonding wire for a high-speed signal line for connecting a pad electrode of a semiconductor device and a lead electrode on a circuit board, consisting essentially of:

a trace additive element;

0.8 to 2.5 mass % of palladium (Pd);

0.1 to 0.7 mass % of platinum (Pt); and

at least one element selected from the group consisting of rhodium (Rh), iridium (Ir), ruthenium (Ru), copper (Cu), nickel (Ni), iron (Fe), magnesium (Mg), zinc (Zn), aluminum (Al), indium (In), silicon (Si), germanium (Ge), beryllium (Be), bismuth (Bi), selenium (Se), cerium (Ce), yttrium (Y), lanthanum (La), calcium (Ca) and europium (Eu),

wherein a total amount of the trace additive element is 5 to 300 mass ppm, and a remaining is silver (Ag) with purity of 99.99 mass % or more,

the bonding wire comprises a core and a skin region in a doughnut shape segregated on the core so that a high purity silver segregation layer covers a lower purity silver on a surface of the bonding wire, and

the skin region contains an alloy having a higher content of silver (Ag) than a content of silver (Ag) in the core to thereby transmit super-high frequency.

4. The bonding wire for the high-speed signal line according to claim 1 , wherein a ratio of palladium (Pd) to platinum (Pt) is within a range of 5:1 to 10:1.

5. The bonding wire for the high-speed signal line according to claim 1 , wherein the high-speed signal has a frequency of 1 to 15 GHz.

6. The bonding wire for the high-speed signal line according to claim 1 , wherein the pad electrode comprises an aluminum (Al) metal with purity of 99.9 mass % or more or an aluminum (Al) alloy comprising 0.5 to 2.0 mass % of silicon (Si) or copper (Cu) and the remaining is aluminum (Al) with purity of 99.9 mass % or more.

7. The bonding wire for the high-speed signal line according to claim 1 , wherein the pad electrode is an electrode pad whose outer layer is gold (Au), palladium (Pd), or platinum (Pt).

8. The bonding wire for the high-speed signal line according to claim 1 , wherein a thickness of the skin region is 10 nm.

9. The bonding wire for the high-speed signal line according to claim 2 , wherein a thickness of the surface segregation layer is 10 nm.