Apparatus and techniques for filling a cavity using angled ion beam
A method may include generating a plasma in a plasma chamber and directing the ions comprising at least one of a condensing species and inert gas species from the plasma to a cavity within a substrate at a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The method may further include; depositing a fill material within the cavity using the condensing species, the depositing taking place concurrently with the directing the ions, wherein the fill material accumulates on a lower surface of the cavity at a first rate, and wherein the fill material accumulates on an upper portion of a sidewall of the cavity at a second rate less than the first rate.
1. A method, comprising:
generating a plasma in a plasma chamber;
providing a substrate in a process chamber, adjacent the plasma chamber, the substrate having a cavity; and
depositing a fill material within the cavity by providing neutral species to the substrate and directing ions as an ion beam comprising a condensing species, from the plasma to the cavity at a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, wherein the ions do not strike a lower surface of the cavity during the depositing, wherein the neutral species comprise trajectories different from a trajectory of the ions,
wherein the depositing takes place concurrently with the directing the ions, and
wherein the fill material accumulates on a lower surface of the cavity at a first rate, and wherein the fill material accumulates on an upper portion of a sidewall of the cavity at a second rate less than the first rate.
2. The method of claim 1 , the directing the ions comprising extracting the ions through an extraction plate having an elongated aperture.
3. The method of claim 2 , the directing the ions further comprising:
providing a beam blocker within the plasma chamber adjacent the elongated aperture;
extracting a first portion of the ions as a first ion beam through a first portion of the aperture, the first portion forming a first non-zero angle of incidence with respect to the perpendicular; and
extracting a second portion of the ions as a second ion beam through a second portion of the elongated aperture, the second portion forming a second non-zero angle of incidence with respect to the perpendicular, wherein the perpendicular bisects the first non-zero angle of incidence and second non-zero angle of incidence.
4. The method of claim 1 , further comprising providing a reactive species to the substrate without traversing the plasma chamber, the reactive species forming a part of the fill material.
5. The method of claim 1 , wherein the fill material comprises a non-reentrant profile at least until a lowest level of the fill material is flush with a top of the cavity.
6. The method of claim 1 , wherein the non-zero angle of incidence is 30 degrees or less.
7. The method of claim 1 , further comprising reducing a magnitude of the non-zero angle of incidence during the directing the ions.
8. The method of claim 7 , wherein the reducing the magnitude comprises increasing a gap between the substrate an extraction plate used to extract the ions from the plasma chamber.
9. The method of claim 1 , wherein the condensing species are formed from a precursor gas directed into the plasma chamber, the method further comprising flowing the precursor gas into the plasma chamber at a first rate during at a first instance during the depositing, and flowing the precursor gas into the plasma chamber at a second rate less than the first rate at a second instance subsequent to the first instance during the depositing.
10. The method of claim 1 , wherein the substrate comprises a second material different from the fill material, the method further comprising performing a selective etch of the fill material after the depositing the fill material, wherein a portion of the fill material is selectively removed with respect to the second material.
11. The method of claim 10 , wherein the performing the selective etch comprises directing an etchant ion beam from the plasma chamber to the cavity at a select non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein fill material disposed on the upper portion of the sidewall is selectively removed with respect to fill material disposed in other regions of the cavity.
12. The method of claim 11 , wherein the depositing the fill material and the performing the selective etch comprise a fill cycle, the method further comprising performing at least on additional fill cycle.
13. A method, comprising:
generating a plasma in a plasma chamber;
providing a substrate in a process chamber, adjacent the plasma chamber, the substrate having a cavity; and
depositing a fill material within the cavity by providing neutral species to the substrate and directing ions as an ion beam comprising at least one of a condensing species and inert gas species, from the plasma to the cavity, the ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, the cavity comprising a lower surface and a sidewall, wherein the ions do not strike a lower surface of the cavity during the depositing, wherein the neutral species comprise trajectories different from a trajectory of the ions,
wherein the depositing takes place concurrently with the directing the ions;
and
performing a selective etch comprising directing an etchant ion beam from the plasma chamber to the cavity at a select non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein fill material deposited on an upper portion of the sidewall is selectively removed with respect to fill material disposed in other regions of the cavity.
14. The method of claim 13 , wherein the substrate comprises a second material, and wherein the selective etch comprises removing a portion of the fill material selectively with respect to the second material.