Semiconductor package
A semiconductor package includes a semiconductor substrate and an electrode pad formed on the semiconductor substrate. The electrode pad includes a central portion and a peripheral portion, and a first pattern is located on the peripheral portion. A passivation layer is formed on the semiconductor substrate and the electrode pad. The passivation layer has an opening exposing the central portion of the electrode pad and a second pattern located on the first pattern. A seed layer is formed on the electrode pad and the passivation layer. The seed layer has a third pattern formed on the second pattern. A bump is formed on the seed layer and electrically connected to the electrode pad. An undercut is formed around the third pattern located under an edge of a lower portion of the bump.
1. A semiconductor package comprising:
a semiconductor substrate;
an electrode pad on the semiconductor substrate and including a central portion and a peripheral portion, wherein a first pattern is located on the peripheral portion;
a passivation layer on the semiconductor substrate and the electrode pad, the passivation layer having an opening exposing the central portion of the electrode pad and a second pattern located on the first pattern;
a seed layer on the electrode pad and the passivation layer and having a third pattern on the second pattern; and
a bump on the seed layer and electrically connected to the electrode pad,
wherein an undercut is formed in the third pattern located under an edge of a lower portion of the bump,
wherein the bump comprises a pillar layer being in contact with the seed layer and a solder layer on the pillar layer,
wherein a top surface of the pillar layer extending over the central portion and the peripheral portion is a flat surface, and
wherein, in an area where the second pattern of the passivation layer is formed, a level of an uppermost surface of the passivation layer is lower than a level of a lowermost surface of the pillar layer, and top and bottom surfaces of the undercut are curved surfaces.
2. The semiconductor package of claim 1 , wherein
a bottom surface of the pillar layer is a curved surface corresponding to the third pattern.
3. The semiconductor package of claim 1 , wherein a distance from a center of the pillar layer to a side surface of the pillar layer is greater than a distance from a center of the seed layer to a side surface of the seed layer.
4. The semiconductor package of claim 1 , wherein, in the electrode pad, the first pattern is spaced apart from the central portion and surrounds the central portion, and
a top surface of the first pattern is at a same level as a top surface of the central portion.
5. The semiconductor package of claim 4 , wherein the first pattern comprises a plurality of isolated fine patterns,
a width of each of the fine patterns is substantially equal to a distance between the fine patterns.
6. The semiconductor package of claim 1 , wherein, in the electrode pad, the first pattern is connected to the central portion, and
a top surface of the first pattern is a curved surface.
7. The semiconductor package of claim 1 , wherein the second pattern has a shape corresponding to the first pattern, and
the third pattern has a shape corresponding to the second pattern.
8. The semiconductor package of claim 1 , wherein, in the passivation layer, the opening is surrounded by the second pattern.
9. The semiconductor package of claim 1 , wherein the passivation layer is a silicon oxide layer or a silicon nitride layer.