Memory arrays and methods of forming an array of memory cell
A method of forming an array of memory cells includes forming lines of covering material that are elevationally over and along lines of spaced sense line contacts. Longitudinal orientation of the lines of covering material is used in forming lines comprising programmable material and outer electrode material that are between and along the lines of covering material. The covering material is removed over the spaced sense line contacts and the spaced sense line contacts are exposed. Access lines are formed. Sense lines are formed that are electrically coupled to the spaced sense line contacts. The sense lines are angled relative to the lines of spaced sense line contacts and relative to the access lines. Other embodiments, including structure independent of method, are disclosed.
1. A method of forming an array of memory cells, comprising:
forming lines of covering material that are elevationally over and along lines of spaced sense line contacts;
longitudinally lining void space between the lines of covering material with programmable material;
depositing outer electrode material over the programmable material to over-fill remaining void space between the lines of covering material;
removing the outer electrode material back at least to an elevationally outermost surface of the covering material to form lines comprising the programmable material and the outer electrode material, and to form coplanar elevationally outermost surfaces of the covering material and the outer electrode material;
removing the covering material over the spaced sense line contacts and exposing the spaced sense line contacts;
forming access lines; and
forming sense lines that are electrically coupled to the spaced sense line contacts, the sense lines angling longitudinally perpendicular relative to longitudinal orientation of the lines of spaced sense line contacts and relative to longitudinal orientation of the access lines.
2. The method of claim 1 comprising also removing the programmable material back at least to the elevationally outermost surface of the covering material to form a planar outermost surface of the programmable material that is coplanar with the elevationally outermost surfaces of the covering material and the outer electrode material.
3. The method of claim 1 comprising elevationally recessing the outer electrode material relative to the covering material after forming the coplanar elevationally outermost surfaces.
4. The method of claim 1 wherein the removing of the covering material is of all of the covering material of the lines of covering material, and further comprising:
after removing the covering material, depositing a first dielectric to be thicker atop the lines comprising outer electrode material and programmable material than over bases between the lines comprising outer electrode material and programmable material; and
forming a second dielectric over the first dielectric to cover sidewalls of the lines comprising outer electrode material and programmable material.
5. The method of claim 1 comprising forming anisotropically etched sidewall spacers against sidewalls of the lines of covering material, and forming the lines comprising programmable material and outer electrode material between the spacers of adjacent lines of covering material.
6. The method of claim 1 wherein the removing is of only a portion of the covering material of the lines of covering material.
7. The method of claim 1 wherein the removing is of all of the covering material of the lines of covering material.
8. A method of forming an array of memory cells, comprising:
forming lines of covering material that are elevationally over and along lines of spaced sense line contacts;
longitudinally lining void space between the lines of covering material with programmable material;
depositing outer electrode material over the programmable material to over-fill remaining void space between the lines of covering material;
removing the outer electrode material back at least to an elevationally outermost surface of the covering material to form lines comprising the programmable material and the outer electrode material, and to form coplanar elevationally outermost surfaces of the covering material and the outer electrode material;
removing the covering material over the spaced sense line contacts and exposing the spaced sense line contacts;
forming access lines; and
forming sense lines that are electrically coupled to the spaced sense line contacts.
9. The method of claim 8 comprising also removing the programmable material back at least to the elevationally outermost surface of the covering material to form a planar outermost surface of the programmable material that is coplanar with the elevationally outermost surfaces of the covering material and the outer electrode material.
10. The method of claim 8 comprising elevationally recessing the outer electrode material relative to the covering material after forming the coplanar elevationally outermost surfaces.
11. The method of claim 8 wherein the removing of the covering material is of all of the covering material of the lines of covering material, and further comprising:
after removing the covering material, depositing a first dielectric to be thicker atop the lines comprising outer electrode material and programmable material than over bases between the lines comprising outer electrode material and programmable material; and
forming a second dielectric over the first dielectric to cover sidewalls of the lines comprising outer electrode material and programmable material.
12. The method of claim 8 comprising forming anisotropically etched sidewall spacers against sidewalls of the lines of covering material, and forming the lines comprising programmable material and outer electrode material between the spacers of adjacent lines of covering material.
13. The method of claim 8 wherein the removing is of only a portion of the covering material of the lines of covering material.
14. The method of claim 8 wherein the removing is of all of the covering material of the lines of covering material.
15. The method of claim 8 wherein the covering material comprises dielectric material.