IP Library › Granted Patent US 10,014,153
Granted Patent B2
US 10,014,153 · App. 15/422,936 · Granted Jul 3, 2018

Electron microscope and method of aberration measurement

Inventor: Yuji Kohno (Tokyo, JP)
Assignee: JEOL Ltd.
H01J37/153H01J37/22H01J37/222H01J37/244H01J37/265H01J37/28H01J2237/0453H01J2237/1534H01J2237/24455H01J2237/2802
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Quick Facts
Patent No.
US 10,014,153
App. No.
15/422,936
Granted
Jul 3, 2018
Kind
B2
Abstract

There is provided an electron microscope capable of measuring aberration with high accuracy. The electron microscope ( 100 ) comprises: an electron beam source ( 10 ) for producing an electron beam (EB); an illumination lens system ( 101 ) for focusing the electron beam (EB) onto a sample (S); a scanner ( 12 ) for scanning the focused electron beam (EB) over the sample (S); an aperture stop ( 30 ) having a plurality of detection angle-limiting holes ( 32 ) for extracting rays of the electron beam (EB) having mutually different detection angles from the electron beam (EB) transmitted through the sample (S); and a detector ( 20 ) for detecting the rays of the electron beam (EB) passed through the aperture stop ( 30 ).

Claims (30)

1. An electron microscope comprising:

an electron beam source for producing an electron beam;

an illumination lens system for focusing the electron beam onto a sample;

a scanner for scanning the focused electron beam over the sample;

an aperture stop having a plurality of detection angle-limiting holes for extracting rays of the electron beam having mutually different detection angles from the electron beam transmitted through the sample and one reference hole for extracting rays of the electron beam passed through the reference hole having a reference detection angle;

a detector for detecting the rays of the electron beams passed through the aperture stop, said detector having a first detector segment and a second detector segment, said first detector segment being operative to detect rays of the electron beam passed through said plurality of detection angle-limiting holes, and said second detector segment being operative to detect rays of the electron beam passed through the reference hole,

an image generator for generating a first STEM (scanning transmission electron microscope) image based on the output from said first detector segment and a second STEM image based on the output from the second detector segment; and

an aberration calculator for finding an aberration in said illumination lens system based on the first STEM image and the second STEM image.

2. The electron microscope as set forth in claim 1 , wherein said aberration calculator finds the aberration in said illumination lens system by calculating a correlation function between said first STEM image and said second STEM image.

3. The electron microscope as set forth in claim 1 ,

wherein said first detector segment has an annular shape and said second detector segment being positioned in an area surrounded by the first detector segment.

4. The electron microscope as set forth in claim 3 , wherein said first detector segment is split into a plurality of subsegments capable of independently detecting rays of the electron beam.

5. A method of measuring an aberration in an illumination lens system of an electron microscope having an electron beam source for producing an electron beam, said illumination lens system for focusing the electron beam onto a sample, a scanner for scanning the focused electron beam over the sample, and a detector for detecting the electron beam transmitted through the sample; said method comprising the steps of:

(a) placing a first aperture stop having a plurality of detection angle-limiting holes for extracting rays of the electron beam having mutually different detection angles from the electron beam transmitted through the sample at a position between the sample and the detector, detecting the rays of the electron beams and obtaining a first STEM (scanning transmission electron microscope) image;

(b) placing a second aperture stop having a reference detection angle-limiting hole for extracting rays of the electron beam having a reference detection angle from the electron beam transmitted through the sample at a position between the sample and the detector, detecting the rays of the electron beam and obtaining a second STEM image; and

(c) calculating the aberration in said illumination lens system based on the first STEM image and the second STEM image.

6. The method of measuring an aberration in an illumination lens system of an electron microscope as set forth in claim 5 ,

wherein said steps of (a) and (b) are executed by using the single aperture stop having both a plurality of detection angle-limiting holes and a reference detection angle-limiting hole.

7. The method of measuring an aberration in an illumination lens system of an electron microscope as set forth in claim 5 ,

wherein the aberration is found based on calculation of a correlation function between said first STEM image and said second STEM image in step (c).

8. An electron microscope comprising:

an electron beam source for producing an electron beam;

an illumination lens system for focusing the electron beam onto a sample;

a scanner for scanning the focused electron beam over the sample;

a first aperture stop having a plurality of detection angle-limiting holes for extracting rays of the electron beam having mutually different detection angles from the electron beam transmitted through the sample;

a second aperture stop having a reference detection angle-limiting hole for extracting rays of the electron beam having specific detection angle from the electron beam transmitted through the sample, wherein the first and second aperture stops may be arranged in two stages along the path of the electron beam transmitted through the sample or selectively placed in a path of the electron beam transmitted through the sample;

a detector for detecting the rays of the electron beams passed through the aperture stops;

an image generator for generating a first STEM (scanning transmission electron microscope) image based on results of detections performed by said detector by detecting the rays of the electron beams passed through the first aperture stop and for generating a second STEM image based on results of detections performed by said detector by detecting the rays of the electron beam passed through the second aperture stop; and

an aberration calculator for finding an aberration in said illumination lens system based on the first STEM image and the second STEM image.

9. The electron microscope as set forth in claim 8 , wherein said aberration calculator finds the aberration in said illumination lens system by calculating a correlation function between said first STEM image and said second STEM image.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 13, 2017
From: KOHNO, YUJI
To: JEOL LTD.
Reel/Frame 041998/0034 →
Priority Claims (1)
JP 2016-18790 · Feb 3, 2016 · national
Continuity (1)
Related Publication 20170236684A1 · Aug 17, 2017
Cited By (1)
US 12,625,090