IP Library Granted Patent US 10,025,190
Granted Patent B2
US 10,025,190 · App. 15/106,915 · Granted Jul 17, 2018

Substrate treatment system

Inventors: Seiji Nagahara (Tokyo, JP); Gousuke Shiraishi (Koshi, JP); Satoru Shimura (Koshi, JP); Kousuke Yoshihara (Koshi, JP); Shinichiro Kawakami (Koshi, JP); Masaru Tomono (Koshi, JP); Seiichi Tagawa (Suita, JP); Akihiro Oshima (Suita, JP)
Assignees: TOKYO ELECTRON LIMITED; OSAKA UNIVERSITY
G03F7/2004G03F7/20H01L21/67098H01L21/67115H01L21/67196H01L21/67225
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Quick Facts
Patent No.
US 10,025,190
App. No.
15/106,915
Granted
Jul 17, 2018
Kind
B2
Abstract

A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Claims (39)

1. A substrate treatment system for treating a substrate, comprising:

a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided;

an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system;

a light irradiation apparatus which performs post-exposure with one-shot exposure of an entire surface of the substrate using UV light on the resist film on the substrate after the exposure of patterns is performed and prior to treatment by the treatment apparatus; and

a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere,

wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere;

wherein the post-exposure station and the exposure apparatus are located in separate chambers; and

wherein the post-exposure station is provided between the exposure apparatus and the interface station.

2. The substrate treatment system according to claim 1 ,

wherein another interface station in a same atmosphere as an atmosphere of the post-exposure station is provided between the post-exposure station and the exposure apparatus.

3. The substrate treatment system according to claim 1 ,

wherein the post-exposure station is connected, in parallel with the exposure apparatus, to the interface station, and

wherein the interface station is adjustable to a reduced pressure or inert gas atmosphere.

4. The substrate treatment system according to claim 1 ,

wherein a thermal treatment apparatus which performs heat treatment after exposure processing, on the substrate after the post-exposure is installed in a same atmosphere as an atmosphere of the post-exposure station, or a treatment space thereof in which thermal treatment is performed is set to a same atmosphere as an atmosphere of the post-exposure station.

5. The substrate treatment system according to claim 1 , further comprising:

an inspection apparatus which inspects the substrate which has been subjected to post-exposure by the light irradiation apparatus and then to developing treatment; and

a control unit which controls the light irradiation apparatus, based on an inspection result of the inspection apparatus.

6. The substrate treatment system according to claim 1 ,

wherein the exposure of patterns is performed using EUV light, EB or ArF excimer laser light.

7. A substrate treatment system for treating a substrate, comprising:

a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided;

an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system;

a light irradiation apparatus which performs post-exposure with one-shot exposure of an entire surface of the substrate using UV light on the resist film on the substrate after the exposure of patterns is performed and prior to treatment by the treatment apparatus; and

a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere,

wherein the post-exposure station and the exposure apparatus are located in separate chambers;

wherein the post-exposure station is connected, in parallel with the exposure apparatus, to the interface station; and

wherein the interface station is adjustable to a reduced pressure or inert gas atmosphere.

8. The substrate treatment system according to claim 7 , further comprising:

an inspection apparatus which inspects the substrate which has been subjected to post-exposure by the light irradiation apparatus and then to developing treatment; and

a control unit which controls the light irradiation apparatus, based on an inspection result of the inspection apparatus.

9. The substrate treatment system according to claim 7 ,

wherein the exposure of patterns is performed using EUV light, EB or ArF excimer laser light.

10. The substrate treatment system according to claim 7 ,

wherein the post-exposure station is provided between the exposure apparatus and the interface station.

11. The substrate treatment system according to claim 10 ,

wherein another interface station in a same atmosphere as an atmosphere of the post-exposure station is provided between the post-exposure station and the exposure apparatus.

12. The substrate treatment system according to claim 7 ,

wherein a thermal treatment apparatus which performs heat treatment after exposure processing, on the substrate after the post-exposure is installed in a same atmosphere as an atmosphere of the post-exposure station, or a treatment space thereof in which thermal treatment is performed is set to a same atmosphere as an atmosphere of the post-exposure station.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 21, 2016
From: NAGAHARA, SEIJI; SHIRAISHI, GOUSUKE; SHIMURA, SATORU; YOSHIHARA, KOUSUKE; KAWAKAMI, SHINICHIRO; TOMONO, MASARU; TAGAWA, SEIICHI; OSHIMA, AKIHIRO
To: TOKYO ELECTRON LIMITED; OSAKA UNIVERSITY
Reel/Frame 038972/0373 →
Priority Claims (2)
JP 2013-271156 · Dec 27, 2013 · national
JP 2014-233370 · Nov 18, 2014 · national
Continuity (1)
Related Publication 20170031245A1 · Feb 2, 2017
Cited By (1)
US 12,591,180