IP Library Granted Patent US 10,032,683
Granted Patent B2
US 10,032,683 · App. 14/741,086 · Granted Jul 24, 2018

Time temperature monitoring system

Inventors: Taryn J. Davis (Beacon, NY); Jonathan R. Fry (Wappingers Falls, NY); Terence L. Kane (Wappingers Falls, NY); Christopher F. Klabes (Poughkeepsie, NY); Andrew J. Martin (Carmel, NY); Vincent J. McGahay (Poughkeepsie, NY); Kathryn E. Schlichting (Bloomington, MN); Melissa A. Smith (Wappingers Falls, NY)
Assignee: International Business Machines Corporation
H01L22/34G01K3/04H01L22/14H01L22/26
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Quick Facts
Patent No.
US 10,032,683
App. No.
14/741,086
Granted
Jul 24, 2018
Kind
B2
Abstract

A time temperature monitoring system and method for use with a microchip or similar structure. A disclosed system includes: a substrate having an active region; a dopant source located proximate the active region; an activation system for activating a diffusion of the dopant source into the active region; and a set of spatially distributed electrodes embedded in the active region of the substrate, wherein the electrodes are configured to detect the diffusion in the active region at varying distances from the dopant source to provide time temperature information.

Claims (10)

1. A microchip having an integrated time temperature monitoring system, the microchip comprising:

a substrate having an active region;

a dopant source located proximate the active region;

an activation system for activating a diffusion of the dopant source into the active region;

a set of spatially distributed electrodes embedded in the active region of the substrate, wherein the electrodes are configured to measure the diffusion correlated to time and temperature in the active region at varying distances from the dopant source and the set of spatially distributed electrodes comprise an array of field effect transistors (FETs) located at varying distances from the dopant source; and

an interrogation system that periodically monitors the electrodes.

2. The microchip of claim 1 , wherein the dopant source comprises copper.

3. The microchip of claim 1 , wherein the activation system includes circuitry for applying an electrical current between the dopant source and active region.

4. The microchip of claim 1 , wherein a resistivity breakdown in the active region proximate a FET creates a short circuit condition within the FET rendering the FET inoperable.

5. The microchip of claim 4 , further comprising an analysis system that generates time temperature information based on which FETs are operable and which FETS are inoperable.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 17, 2015
From: DAVIS, TARYN J.; FRY, JONATHAN R.; KANE, TERENCE L.; KLABES, CHRISTOPHER F.; MARTIN, ANDREW J.; MCGAHAY, VINCENT J.; SCHLICHTING, KATHRYN E.; SMITH, MELISSA A.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 035938/0118 →
Continuity (1)
Related Publication 20160372391A1 · Dec 22, 2016
Cited By (2)
US 12,282,059 US 12,736,413