Thermal cycle detectors
A thermal cycle detector includes a first temperature reservoir, a second first temperature reservoir, first thermal barrier, and a plurality of first electrical conductors spanning the first thermal barrier. The first temperature reservoir includes a first transistor, and the second temperature reservoir includes a second transistor. The first thermal barrier is disposed between the first temperature reservoir and the second temperature reservoir. The plurality of first electrical conductors is configured to provide an electrical power source for the thermal cycle detector in response to a thermal gradient across the plurality of first electrical conductors.
1 . A thermal cycle detector, comprising:
a first temperature reservoir including a first transistor;
a second temperature reservoir including a second transistor;
a first thermal barrier disposed between the first temperature reservoir and the second temperature reservoir; and
a plurality of first electrical conductors spanning the first thermal barrier.
2 . The thermal cycle detector of claim 1 , wherein the first electrical conductors of the plurality of first electrical conductors are electrically coupled in series.
3 . The thermal cycle detector of claim 1 , wherein the plurality of first electrical conductors is configured to provide an electrical power source for the thermal cycle detector in response to a thermal gradient across the plurality of first electrical conductors.
4 . The thermal cycle detector of claim 1 , wherein each first electrical conductor of the plurality of first electrical conductors comprises a polysilicon material.
5 . The thermal cycle detector of claim 4 , wherein each first electrical conductor of the plurality of first electrical conductors further comprises one of a P-type dopant and an N-type dopant.
6 . The thermal cycle detector of claim 1 , further comprising a second thermal barrier disposed between the first temperature reservoir and a temperature sensing location.
7 . The thermal cycle detector of claim 1 , further comprising a plurality of second electrical conductors spanning the first thermal barrier and configured to electrical couple the first transistor and the second transistor.
8 . The thermal cycle detector of claim 7 , wherein each second electrical conductor of the plurality of second electrical conductors comprises a polysilicon material.
9 . The thermal cycle detector of claim 8 , wherein each second electrical conductor of the plurality of second electrical conductors comprises one of a P-type dopant and an N-type dopant.
10 . The thermal cycle detector of claim 1 , wherein the first thermal barrier comprises a trench formed in a semiconductor material.
11 . The thermal cycle detector of claim 10 , wherein the trench is filled with air, an oxide material, or a polysilicon material.
12 . The thermal cycle detector of claim 1 , wherein:
the first transistor comprises an emitter region including each of a first type of dopant and a second type of dopant; and
the second type of dopant has a lower activation energy than the first type of dopant.
13 . The thermal cycle detector of claim 12 , further comprising a second electrical conductor spanning the first thermal barrier and electrically coupling the emitter region of the first transistor and a base region of the second transistor.
14 . A thermal cycle detector, comprising:
a first temperature reservoir including a plurality of transistors;
a second temperature reservoir including a plurality of transistors;
a first thermal barrier disposed between the first temperature reservoir and the second temperature reservoir; and
a second thermal barrier disposed between the first temperature reservoir and a temperature sensing location.
15 . The thermal cycle detector of claim 14 , wherein each of the first temperature reservoir, the second temperature reservoir, the first thermal barrier, and the second thermal barrier is concentric with respect to a center axis of the thermal cycle detector.
16 . The thermal cycle detector of claim 14 , further comprising a plurality of first electrical conductors spanning the first thermal barrier, wherein the plurality of first electrical conductors is configured to provide an electrical power source for the thermal cycle detector in response to a thermal gradient across the plurality of first electrical conductors.
17 . The thermal cycle detector of claim 16 , further comprising a plurality of second electrical conductors spanning the first thermal barrier and being configured to electrical couple (a) the plurality of transistors included in the first temperature reservoir and (b) the plurality of transistors included in the second temperature reservoir.
18 . An assembly, comprising:
a package; and
a thermal cycle detector at least partially within the package, including:
a first temperature reservoir including a first transistor,
a second temperature reservoir including a second transistor,
a first thermal barrier disposed between the first temperature reservoir and the second temperature reservoir, and
a plurality of first electrical conductors spanning the first thermal barrier.
19 . The assembly of claim 18 , wherein the package is configured such that the package does not directly contact any one of the first temperature reservoir, the second temperature reservoir, and the first thermal barrier.
20 . The assembly of claim 18 , wherein:
the package comprises one or more electrically conductive elements and a plurality of bond wires; and
each bond wire of the plurality of bond wires is configured to thermally couple a heatsink of the thermal cycle detector and the one or more electrically conductive elements.