Method for selectively etching with reduced aspect ratio dependence
A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.
1. A method for selectively etching an etch layer with respect to a mask with isolated and dense regions, comprising:
placing the etch layer in a processing chamber;
providing an etch process comprising a plurality of etch cycles, wherein each etch cycle comprises:
providing a deposition phase, comprising:
providing a flow of a deposition phase gas into the processing chamber comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio;
providing a RF power, which forms the deposition phase gas into a plasma; and
stopping the deposition phase; and
providing an etch phase, comprising:
providing a flow of an etch phase gas into the processing chamber comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas;
providing a RF power, which forms the etch phase gas into a plasma; and
stopping the etch phase.
2. The method, as recited in claim 1 , wherein a bias is provided during the etch phase that is higher than a bias provided during the deposition phase.
3. The method, as recited in claim 1 , wherein the etch phase gas comprises at least one of CF 4 , C 4 F 6 , O 2 , or Ar and wherein the deposition phase gas comprises at least C 4 F 6 and an oxygen containing gas.
4. The method, as recited in claim 1 , wherein the etch layer comprises silicon oxide.
5. The method, as recited in claim 4 , wherein the mask comprises silicon nitride.
6. The method, as recited in claim 1 , wherein the etch partially etches the etch layer to a target depth.
7. The method, as recited in claim 1 , wherein the etch process selectively deposits polymer on the mask with respect to the etch layer.
8. The method, as recited in claim 1 , wherein the etch phase further comprises providing a bias RF power with an RF frequency of less than 10 MHz, wherein the deposition phase does not have a bias RF power with an RF frequency of less than 10 MHz.
9. The method, as recited in claim 1 , further comprising providing a wet process to remove residue formed by the etch process.
10. The method, as recited in claim 1 , further comprising providing a wet process to remove taper formed by the etch process.
11. The method, as recited in claim 1 , wherein the RF power provided during the etch phase is greater than the RF power provided during the deposition phase.
12. The method, as recited in claim 1 , wherein the RF power provided during the etch phase is pulsed and the RF power provided during the deposition phase is pulsed.
13. A method for selectively etching a silicon oxide containing layer with respect to a silicon nitride containing mask with isolated and dense regions, comprising:
placing the etch layer in a processing chamber;
maintaining an electrostatic chuck at a temperature between 60° C. to 120° C.;
providing an etch process comprising a plurality of etch cycles, wherein each etch cycle comprises:
providing a deposition phase, comprising:
providing a flow of a deposition phase gas into the processing chamber comprising a fluorocarbon or hydrofluorocarbon containing gas;
providing a RF power, which forms the deposition phase gas into a plasma; and
stopping the deposition phase; and
providing an etch phase, comprising:
providing a flow of an etch phase gas, which is fluorocarbon and hydrofluorocarbon free and comprises Ar and an oxygen containing gas, into the processing chamber;
providing a RF power, which forms the etch phase gas into a plasma; and
stopping the etch phase.
14. The method, as recited in claim 13 , wherein a bias is provided during the etch phase that is higher than a bias provided during the deposition phase.
15. The method, as recited in claim 13 , wherein the etch partially etches the etch layer to a target depth.
16. The method, as recited in claim 13 , wherein the etch phase further comprises providing a bias RF power of less than 10 MHz, wherein the deposition phase does not have a bias RF power of less than 10 MHz.
17. The method, as recited in claim 13 , further comprising providing a wet process to remove residue formed by the etch process.
18. The method, as recited in claim 13 , wherein the RF power provided during the etch phase is greater than the RF power provided during the deposition phase.