Structure and method for capping cobalt contacts
A process for forming a conductive structure includes the formation of a self-aligned silicide cap over a cobalt-based contact. The silicide cap is formed in situ by the deposition of a thin silicon layer over exposed portions of a cobalt contact, followed by heat treatment to react the deposited silicon with the cobalt and form cobalt silicide, which is an effective barrier to cobalt migration and oxidation.
1. A method for forming a semiconductor device, comprising:
forming a via in a dielectric layer;
forming a conductive contact within the via, wherein the conductive contact comprises cobalt;
forming a silicon layer directly over the contact and over the dielectric layer, wherein the silicon layer comprises elemental silicon or silicon doped with up to 5 atomic percent of one or more dopants; and
reacting the silicon layer over the contact to form a cobalt silicide capping layer directly over the contact.
2. The method of claim 1 , wherein forming the conductive contact comprises forming a liner/barrier layer within the via.
3. The method of claim 1 , wherein forming the conductive contact comprises filling the via with cobalt or a cobalt alloy, wherein the cobalt alloy comprises cobalt and up to 50 atomic percent of one or more element selected from the group consisting of B, C, N, Mg, Al, Si, P, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Ir, Pt and Au.
4. The method of claim 1 , wherein the silicon layer is formed over the dielectric layer laterally adjacent to the via.
5. The method of claim 1 , wherein the silicon layer is formed at a temperature of less than 275° C.
6. The method of claim 1 , wherein the silicon layer thickness is 2 to 10 nm.
7. The method of claim 1 , wherein reacting the silicon layer with the conductive contact comprises annealing silicon layer and the conductive contact at a temperature of 200° C. to 400° C.
8. The method of claim 1 , further comprising nitriding the silicon layer over the dielectric layer.
9. The method of claim 1 , further comprising removing the silicon layer from over the dielectric layer.
10. The method of claim 1 , wherein a top surface of the cobalt silicide capping layer is co-planar with a top surface of the dielectric layer.
11. The method of claim 1 , further comprising forming an interlayer dielectric over the cobalt silicide capping layer and over the dielectric layer.
12. The method of claim 11 , wherein an interface between the interlayer dielectric and the dielectric layer is substantially free of cobalt.
13. The method of claim 1 , wherein all of the silicon layer over the contact reacts to form the cobalt silicide.
14. A method for forming a semiconductor device, comprising:
forming a via in a dielectric layer;
forming a conductive contact within the via, wherein the conductive contact comprises elemental cobalt;
forming a silicon layer directly over the contact and over the dielectric layer, wherein the silicon layer comprises elemental silicon or silicon doped with up to 5 atomic percent of one or more dopants; and
reacting the silicon layer over the contact to form a cobalt silicide capping layer directly over the contact.