IP Library Granted Patent US 10,056,165
Granted Patent B2
US 10,056,165 · App. 13/695,666 · Granted Aug 21, 2018

Copper alloy for electronic device, method for producing copper alloy for electronic device, and copper alloy rolled material for electronic device

Inventors: Yuki Ito (Okegawa, JP); Kazunari Maki (Saitama, JP)
Assignee: MITSUBISHI MATERIALS CORPORATION
H01B1/026C22C1/02C22C1/03C22C9/04C22F1/08
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Quick Facts
Patent No.
US 10,056,165
App. No.
13/695,666
Granted
Aug 21, 2018
Kind
B2
Abstract

This copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which is composed of Mg at a content of 3.3 to 6.9 atomic %, and a remainder of Cu and inevitable impurities, and a conductivity σ (% IACS) is within the following range when the content of Mg is given as A atomic %, and/or an average number of intermetallic compounds having grain sizes of 0.1 μm or more is in a range of 1/μm 2 or less, σ≤{1.7241/(−0.0347× A 2 +0.6569× A +1.7)}×100.

Claims (17)

1. A copper alloy for an electronic device, wherein

the copper alloy is composed of a binary alloy of Cu and Mg,

the binary alloy consists of Mg at a content in a range of 3.3 to 6.9 atomic %, and a remainder of Cu and inevitable impurities,

a conductivity σ (% IACS) is within the following range when the content of Mg is given as A atomic %,

σ≤{1.7241/(−0.0347× A 2 +0.6569× A+ 1.7)}×100,

the copper alloy is subjected to hot working, cold working, or warm working,

and

the copper alloy substantially consists of a Cu—Mg solid solution alloy supersaturated with Mg.

2. The copper alloy for an electronic device according to claim 1 ,

wherein a Young's modulus E is in a range of 125 GPa or less, and a 0.2% proof stress σ 0.2 is in a range of 400 MPa or more.

3. A method for producing the copper alloy for an electronic device according to claim 1 , the method comprising:

a heating process of heating a copper material composed of a binary alloy of Cu and Mg to a temperature of 500 to 900° C., wherein the binary alloy consists of Mg at a content in a range of 3.3 to 6.9 atomic %, and a remainder of Cu and inevitable impurities;

a rapid cooling process of cooling the heated copper material at a cooling rate of 200° C./min or more to a temperature of 200° C. or lower; and

a working process of working the rapidly cooled copper material, whereby

obtaining the copper alloy according to claim 1 .

4. A rolled copper alloy for an electronic device, which is composed of the copper alloy for an electronic device according to claim 2 ,

wherein the rolled copper alloy is used as a copper material that constitutes a terminal, a connector, or a relay.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 1, 2012
From: ITO, YUKI; MAKI, KAZUNARI
To: MITSUBISHI MATERIALS CORPORATION
Reel/Frame 029226/0245 →
Priority Claims (2)
JP 2010-112265 · May 14, 2010 · national
JP 2010-112266 · May 14, 2010 · national
Continuity (1)
Related Publication 20130048162A1 · Feb 28, 2013