Semiconductor device and method for producing semiconductor device
Hydrogen atoms and crystal defects are introduced into an n− semiconductor substrate by proton implantation. The crystal defects are generated in the n− semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.
1. A semiconductor device, comprising:
a semiconductor substrate having a first and a second side, and comprising a donor layer with a doping concentration higher than the doping concentration of the semiconductor substrate, with a doping concentration profile in a depth direction from the first side to the second side of the substrate;
at least a first peak in said doping concentration profile, situated at a first distance Rp 1 from the first side of said substrate;
a region adjacent to Rp 1 and extending in the depth direction from Rp 1 toward the first side, which has a doping concentration which is substantially uniform,
a second peak in the doping concentration profile, situated at a second distance Rp 2 from the first side of said substrate, wherein said second distance Rp 2 is less than said first distance Rp 1 , and
a region adjacent to Rp 2 and extending in the depth direction from Rp 2 toward the first side of the substrate, which has a doping concentration which is substantially uniform.
2. A semiconductor device according to claim 1 , wherein Rp 2 <0.5Rp 1 .
3. A semiconductor device according to claim 1 , wherein Rp 1 is at least 15 μm.
4. A semiconductor device according to claim 1 , wherein doping concentration in a region between Rp 1 and Rp 2 is substantially uniform.
5. A semiconductor device according to claim 4 , wherein doping concentration in the region between Rp 1 and Rp 2 is at least 10 14 /cm 3 .
6. A semiconductor device according to claim 1 , wherein doping concentration at a distance beyond Rp 1 toward the second side of the substrate in the depth direction is substantially uniform.
7. A semiconductor device according to claim 6 , wherein doping concentration at the distance beyond Rp 1 toward the second side of the substrate is less than doping concentration in the region between Rp 1 and Rp 2 .
8. A semiconductor device according to claim 6 , wherein doping concentration at the distance beyond Rp 1 toward the second side of the substrate in the depth direction is at least 10 14 /cm 3 .
9. A semiconductor device according to claim 1 , wherein the region between Rp 1 and Rp 2 has crystal defects which have silicon atom dangling bonds terminated by hydrogen.
10. A semiconductor device according to claim 1 , wherein the region between Rp 2 and the first side of the substrate has crystal defects which have silicon atom dangling bonds terminated by hydrogen.
11. A semiconductor device according to claim 1 , wherein the region between Rp 1 and Rp 2 is a donor of a vacancy-oxygen-hydrogen complex defect.
12. A semiconductor device according to claim 1 , wherein the region between Rp 2 and the first side of the substrate is a donor of a vacancy-oxygen-hydrogen complex defect.
13. A semiconductor device, comprising:
a semiconductor substrate having a first and a second side, and comprising a donor layer with a doping concentration higher than the doping concentration of the semiconductor substrate, with a doping concentration profile in a depth direction from the first side to the second side of the substrate;
at least a first peak in said doping concentration profile, situated at a first distance Rp 1 from the first side of said substrate;
a region adjacent to Rp 1 and extending in the depth direction from Rp 1 toward the first side, which has a doping concentration which is substantially uniform,
a second peak in the doping concentration profile, situated at a second distance Rp 2 from the first side of said substrate, wherein said second distance Rp 2 is less than said first distance Rp 1 , and
a region between Rp 2 and the first side of the substrate, wherein doping concentration is substantially uniform.
14. A semiconductor device according to claim 13 , wherein doping concentration in the region between Rp 2 and the first side of the substrate is at least 10 14 /cm 3 .
15. A semiconductor device according to claim 13 , wherein doping concentration in the region between Rp 2 and the first side of the substrate is greater than doping concentration in the region between Rp 1 and Rp 2 .
16. A semiconductor device comprising:
a semiconductor substrate having a first and a second side, and comprising a donor layer with a doping concentration higher than the doping concentration of the semiconductor substrate, with a doping concentration profile in a depth direction from the first side to the second side of the substrate;
at least a first peak in said doping concentration profile, situated at a first distance Rp 1 from the first side of said substrate; and
a region adjacent to Rp 1 and extending in the depth direction from Rp 1 toward the first side, which has a doping concentration which is substantially uniform,
wherein the first peak in said doping concentration profile is situated at a first distance Rp 1 which is approximately 50 to 60 μm from the first side of the substrate.
17. A semiconductor device, comprising:
a semiconductor substrate having a first and a second side, and comprising a donor layer with a doping concentration higher than the doping concentration of the semiconductor substrate, with a doping concentration profile in a depth direction from the first side to the second side of the substrate;
at least a first peak in said doping concentration profile, situated at a first distance Rp 1 from the first side of said substrate;
a second peak in doping concentration, situated at a second distance Rp 2 from the first side of said substrate, wherein said second distance Rp 2 is less than said first distance Rp 1 ;
a region adjacent to Rp 1 and extending in the depth direction from Rp 1 toward the first side, which has a doping concentration at least equal to the doping concentration of the semiconductor substrate, and
a region adjacent to Rp 2 and extending in the depth direction from Rp 2 toward the first side of the substrate, which has a doping concentration at least equal to the doping concentration of the semiconductor substrate.
18. A semiconductor device according to claim 17 , wherein doping concentration in the region between Rp 1 and Rp 2 is at least 10 14 /cm 3 .
19. A semiconductor device according to claim 17 , wherein Rp 2 <0.5Rp 1 .
20. A semiconductor device according to claim 19 , wherein Rp 1 is at least 15 μm from the second side of the said substrate.
21. A semiconductor device, comprising:
a semiconductor substrate having a first and a second side, and comprising a donor layer with a doping concentration higher than the doping concentration of the semiconductor substrate, with a doping concentration profile in a depth direction from the first side to the second side of the substrate;
at least a first peak in said doping concentration profile, situated at a first distance Rp 1 from the first side of said substrate;
a region adjacent to Rp 1 and extending in the depth direction from Rp 1 toward the first side, which has a doping concentration of at least 10 14 /cm 3 ,
a second peak in doping concentration, situated at a second distance Rp 2 from the first side of said substrate, wherein said second distance Rp 2 is less than said first distance Rp 1 , and
a region adjacent to Rp 2 and extending in the depth direction from Rp 2 toward the first side of the substrate, which has a doping concentration of at least 10 14 /cm 3 .