IP Library Granted Patent US 10,075,169
Granted Patent B2
US 10,075,169 · App. 15/793,927 · Granted Sep 11, 2018

Configurable computing array based on three-dimensional vertical writable memory

Inventor: Guobiao Zhang (Corvallis, OR)
Assignees: ChengDu HaiCun IP Technology LLC; Guobiao Zhang
H03K19/1776G11C5/02G11C29/028H01L27/1052H03K19/1737H03K19/17728H03K19/17744
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Quick Facts
Patent No.
US 10,075,169
App. No.
15/793,927
Granted
Sep 11, 2018
Kind
B2
Abstract

The present invention discloses a configurable computing array. It is a monolithic integrated circuit comprising at least a configurable computing element and a configurable logic element. The configurable computing element comprises at least a three-dimensional vertical writable memory (3D-W V ) array, which is stacked above the configurable logic element and stores at least a portion of a look-up table (LUT) for a math function.

Claims (33)

1. A configurable computing array, comprising:

a semiconductor substrate;

at least a configurable logic element formed on said semiconductor substrate, wherein said configurable logic element selectively realizes a logic function from a logic library;

at least a configurable computing element formed above said configurable logic element, wherein said configurable computing element comprises a three-dimensional vertical writable memory (3D-W V ) array for storing at least a portion of a look-up table (LUT) for a math function, wherein at least an input of said LUT comprises multiple bits;

wherein said configurable computing array realizes a math function by programming said configurable logic element and said configurable computing element.

2. The configurable computing array according to claim 1 , further comprising at least a configurable interconnect for selectively coupling said configurable computing element and said configurable logic element.

3. The configurable computing array according to claim 1 , wherein said 3D-W V array overlaps at least a portion of said configurable logic element.

4. The configurable computing array according to claim 1 , wherein said 3D-W V array comprises vertical transistors or vertical transistor-like devices.

5. The configurable computing array according to claim 4 , wherein said 3D-W V array comprises 3D-NAND array.

6. The configurable computing array according to claim 1 , wherein said 3D-W V array comprises vertical diodes or vertical diode-like devices.

7. A configurable computing array, comprising:

a semiconductor substrate;

at least a configurable interconnect formed on said semiconductor substrate, wherein said configurable interconnect selectively realizes an interconnect from an interconnect library;

at least a configurable computing element formed above said configurable interconnect, wherein said configurable computing element comprises a three-dimensional vertical writable memory (3D-W V ) array for storing at least a portion of a look-up table (LUT) for a math function, wherein at least an input of said LUT comprises multiple bits;

wherein said configurable computing array realizes a math function by programming said configurable interconnect and said configurable computing element.

8. The configurable computing array according to claim 7 , further comprising at least a configurable logic element formed on said semiconductor substrate, wherein said configurable logic element selectively realizes a logic function from a logic library.

9. The configurable computing array according to claim 7 , wherein said 3D-W V array overlaps at least a portion of said configurable interconnect.

10. The configurable computing array according to claim 7 , wherein said 3D-W V array comprises vertical transistors or vertical transistor-like devices.

11. The configurable computing array according to claim 10 , wherein said 3D-W V array comprises 3D-NAND array.

12. The configurable computing array according to claim 7 , wherein said 3D-W V array comprises vertical diodes or vertical diode-like devices.

13. A configurable computing array, comprising:

a semiconductor substrate;

at least a configurable interconnect formed on said semiconductor substrate, wherein said configurable interconnect selectively realizes an interconnect from an interconnect library;

at least a configurable logic element formed on said semiconductor substrate, wherein said configurable logic element selectively realizes a logic function from a logic library;

at least a configurable computing element formed above said configurable interconnect, wherein said configurable computing element comprises a three-dimensional vertical writable memory (3D-W V ) array for storing at least a portion of a look-up table (LUT) for a math function, wherein at least an input of said LUT comprises multiple bits;

wherein said configurable computing array realizes a math function by programming said configurable interconnect, said configurable logic element and said configurable computing element.

14. The configurable computing array according to claim 13 , wherein said 3D-W V array overlaps at least a portion of said configurable interconnect.

15. The configurable computing array according to claim 13 , wherein said 3D-W V array overlaps at least a portion of said configurable logic element.

16. The configurable computing array according to claim 13 , wherein said 3D-W V array comprises vertical transistors or vertical transistor-like devices.

17. The configurable computing array according to claim 13 , wherein said 3D-W V array comprises vertical diodes or diode-like devices.

18. The configurable computing array according to claim 13 , wherein said 3D-W V array is an OTP (one-time-programmable) array.

19. The configurable computing array according to claim 13 , wherein said 3D-W V array is an MTP (multiple-time-programmable) array.

20. The configurable computing array according to claim 13 , further comprising at least one multiplier.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 23, 2025
From: ZHANG, GUOBIAO, DR.
To: CHENGDU HAICUN IP TECHNOLOGY LLC
Reel/Frame 070917/0001 →
Priority Claims (5)
CN 2016 1 0125227 · Mar 5, 2016 · national
CN 2016 1 0307102 · May 10, 2016 · national
CN 2017 1 0980779 · Oct 20, 2017 · national
CN 2017 1 0980813 · Oct 20, 2017 · national
CN 2017 1 0980826 · Oct 20, 2017 · national
Continuity (3)
Continuation In Part 15450049 · Mar 6, 2017
Continuation In Part 15450017 · Mar 5, 2017
Related Publication 20180048315A1 · Feb 15, 2018