Sputtering target and manufacturing method thereof, and transistor
One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×10 16 atoms/cm 3 , the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H 2 O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.
1. A sputtering target comprising:
a sintered body of at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide,
wherein a concentration of hydrogen atoms contained in the sintered body is lower than 1×10 16 atoms/cm 3 .
2. The sputtering target according to claim 1 , wherein the sintered body is a sintered body of indium oxide, gallium oxide, and zinc oxide.
3. The sputtering target according to claim 1 , further comprising a silicon oxide, wherein the silicon oxide is added to the sputtering target at 0.1 wt % to 20 wt % inclusive.
4. The sputtering target according to claim 1 , wherein the sputtering target has a filling rate of 95% to 99.9% inclusive.
5. A sputtering target comprising:
a sintered body of at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide,
wherein a concentration of hydrogen atoms contained in the sintered body is 5 ×10 17 atoms/cm 3 or less.
6. The sputtering target according to claim 5 , wherein the sintered body is a sintered body of indium oxide, gallium oxide, and zinc oxide.
7. The sputtering target according to claim 5 , further comprising a silicon oxide, wherein the silicon oxide is added to the sputtering target at 0.1 wt % to 20 wt % inclusive.
8. The sputtering target according to claim 5 , wherein the sputtering target has a filling rate of 95% to 99.9% inclusive.