Image sensor having pickup region
The present invention provides an image sensor. An image sensor include a pixel array. The pixel array includes: a plurality of pixels; and an isolation structure suitable for insulating between the plurality of pixels. The isolation structure includes: a first conductivity-type conductive layer formed over a substrate; and a second conductivity-type pickup region formed in the first conductivity-type conductive layer and disposed between each plurality of pixels.
1. An image sensor comprising:
a plurality of unit pixel groups; and
an isolation structure suitable for insulating between the plurality of unit pixel groups,
wherein the isolation structure comprises:
a first conductivity-type conductive layer formed over a substrate; and
a second conductivity-type pickup region formed in the first conductivity-type conductive layer and disposed between two adjacent unit pixel groups,
wherein the first conductivity-type conductive layer comprises either a first conductivity-type well formed in the substrate, or a first conductivity-type epitaxial layer formed over the substrate.
2. The image sensor of claim 1 , wherein the isolation structure further comprises:
an element isolation layer formed over the first conductivity-type conductive layer and having a bottom surface in contact with the second conductivity-type pickup region; and
a plug formed through the element isolation layer and connected to the second conductivity-type pickup region.
3. The image sensor of claim 1 , wherein a positive voltage variable within a voltage range from a voltage higher than a ground voltage to a voltage equal to or lower than a supply voltage is applied to the second conductivity-type pickup region.
4. The image sensor of claim 1 , wherein when the plurality of unit pixel groups operate in a global shutter mode, a positive voltage is applied to the second conductivity-type pickup region during an integration time.
5. The image sensor of claim 1 , wherein when the plurality of unit pixel groups operate in a rolling shutter mode, a positive voltage is always applied to the second conductivity-type pickup region.
6. The image sensor of claim 1 , wherein each of the plurality of unit pixel groups comprises:
a light-receiving part comprising a plurality of photoelectric conversion elements suitable for generating photocharges in response to incident light and sharing a single floating diffusion region; and
an output part suitable for outputting an image signal corresponding to the photocharges generated in the light-receiving part.
7. The image sensor of claim 6 , wherein the second conductivity-type pickup region is disposed between two adjacent light-receiving parts.
8. An image sensor comprising:
a plurality of unit pixel groups; and
an isolation structure suitable for insulating between the plurality of unit pixel groups,
wherein the isolation structure comprises:
a first conductivity-type conductive layer formed over a substrate; and
a second conductivity-type pickup region formed in the first conductivity-type conductive layer and disposed between the plurality of unit pixel groups,
wherein the second conductivity-type pickup region has a dot shape.
9. An image sensor comprising:
a plurality of unit pixel groups;
an isolation structure suitable for insulating between the plurality of unit pixel groups; and
a first pickup region of a first conductivity-type formed in the isolation structure and disposed between two adjacent unit pixel groups,
wherein the isolation structure comprises:
a first conductivity-type conductive layer; and
a second pickup region of a second conductivity-type formed in the first conductivity-type conductive layer and disposed between two adjacent unit pixel groups,
wherein the first and second pickup regions have a dot shape.
10. The image sensor of claim 9 , wherein the isolation structure further comprises:
an element isolation layer formed over the first conductivity-type conductive layer and having a bottom surface in contact with the first and second pickup regions;
a first plug formed through the element isolation layer and connected to the first pickup region; and
a second plug formed through the element isolation layer and connected to the second pickup region.
11. The image sensor of claim 9 , wherein a positive voltage variable within a voltage range from a voltage higher than a ground voltage to a voltage equal to or lower than a supply voltage is applied to the second pickup region.
12. The image sensor of claim 9 , wherein when the plurality of unit pixel groups operate in a global shutter mode, a positive voltage is applied to the second pickup region during an integration time.
13. The image sensor of claim 9 , wherein when the plurality of unit pixel groups operate in a rolling shutter mode, a positive voltage is always applied to the second pickup region.
14. The image sensor of claim 9 , wherein a ground voltage is applied to the first pickup region.
15. The image sensor of claim 9 , wherein the first conductivity-type conductive layer comprises either a first conductivity-type well formed in the substrate, or a first conductivity-type epitaxial layer formed over the substrate.
16. The image sensor of claim 9 , wherein each of the plurality of unit pixel groups comprises:
a light-receiving part comprising a plurality of photoelectric conversion elements suitable for generating photocharges in response to incident light and sharing a single floating diffusion region; and
an output part suitable for outputting an image signal corresponding to the photocharges generated in the light-receiving part.
17. The image sensor of claim 16 , wherein the first pickup region is disposed between two adjacent output parts.
18. The image sensor of claim 16 , wherein the second pickup region is disposed between two adjacent light-receiving parts.