Multi-point chemical mechanical polishing end point detection system and method of using
A wafer polishing system including a platen configured to rotate in a first direction, and a polishing head configured to hold a wafer, the polishing head configured to rotate in a second direction. The wafer polishing system further includes an optical sensing system configured to detect a thickness of the wafer at a first location on the platen and a second location on the platen. A first distance from a center of the platen to the first location is different than a second distance from the center of the platen to the second location.
1. A wafer polishing system comprising:
a platen configured to rotate in a first direction;
a polishing head configured to hold a wafer, the polishing head configured to rotate in a second direction; and
an end point sensing system configured to detect a thickness of the wafer at a first location on the platen and at a second location on the platen,
wherein a first distance from a center of the platen to the first location is different than a second distance from the center of the platen to the second location, and the first distance ranges from 0.4R to 0.6R, where R is a radius of the platen.
2. The wafer polishing system of claim 1 , wherein the second distance ranges from 0.8R to R, where R is a radius of the platen.
3. The wafer polishing system of claim 1 , further comprising a control system configured to monitor the thickness of the wafer and provide instructions to the polishing head to move in a direction perpendicular to the surface of the platen.
4. The wafer polishing system of claim 3 , wherein the control system is further configured to monitor a profile of a surface of the wafer.
5. The wafer polishing system of claim 1 , further comprising:
a polishing pad disposed over a surface of the platen, the polishing pad configured to remove material from the wafer; and
a slurry delivery system configured to supply a slurry to the polishing pad.
6. The wafer polishing system of claim 1 , further comprising:
a polishing pad disposed over a surface of the platen, the polishing pad configured to remove material from the wafer; and
a conditioner configured to restore a texture of the polishing pad.
7. The wafer polishing system of claim 1 , where the end point sensing system is an optical sensing system or an eddy current sensing system.
8. The wafer polishing system of claim 1 , further comprising an eddy current sensing system comprises a first eddy current sensor configured at the first location; and a second eddy current sensor at the second location.
9. The wafer polishing system of claim 1 , further comprising an optical sensing system, wherein the optical sensing system comprises:
a light source configured to provide a light beam; and
a beam splitting element configured to split the light beam to provide a first light beam at the first location and a second light beam at the second location.
10. A method of polishing a wafer, the method comprising:
attaching a wafer to a polishing head;
rotating the polishing head in a first direction;
rotating a platen in a second direction; and
monitoring a thickness of the wafer at a first location on the platen and at a second location on the platen,
wherein a first distance from a center of the platen to the first location is different than a second distance from the center of the platen to the second location, and the second distance ranging from 0.8R to R, where R is equal to a radius of the platen.
11. The method of claim 10 , further comprising terminating the polishing of the wafer when the thickness measured at each of the first and second locations equals a target thickness.
12. The method of claim 10 , further comprising moving the polishing head in a direction perpendicular to a surface of the platen to adjust a pressure exerted on the wafer.
13. The method of claim 10 , further comprising monitoring a profile of a surface of the wafer at the first location and the second location.
14. The method of claim 10 , wherein monitoring the thickness of the wafer at the first location comprises monitoring the thickness of the wafer at the first distance ranging from 0.4R to 0.6R, where R is equal to a radius of the platen.
15. A control system for controlling a wafer polishing system, the control system comprising:
an endpoint sensing system configured to monitor a thickness of a wafer at a first location on a platen and at a second location on the platen, wherein a first distance from a center of the platen to the first location is different than a second distance from the center of the platen to the second location, and the first distance ranges from 0.4R to 0.6R, where R is a radius of the platen;
a processor configured to determine the thickness of the wafer based on information received from the endpoint sensing system and generate a pressure adjustment signal; and
a polishing head configured to move in a direction perpendicular to a surface of the platen in response to the pressure adjustment signal.
16. The control system of claim 15 , wherein the second distance ranges from 0.8R to R, where R is a radius of the platen.
17. The control system of claim 15 , further comprising an optical sensing system, wherein the optical sensing system comprises at least one light source configured to provide a light beam at the first location and the second location.