Semiconductor device, manufacturing method thereof, and electronic apparatus
A semiconductor device includes a wiring layer that includes at least one low-dielectric rate interlayer insulating film layer; a guard ring that is formed by placing in series a wire and a via so as to be in contact with a through electrode, in a portion in which the through electrode passing through the wiring layer is formed; and the through electrode that is formed by being buried inside the guard ring.
1. A method of manufacturing a device, the method comprising:
forming a first plurality of wiring layers at a side of a first substrate such that at least one low-dielectric rate interlayer insulating film layer is between each wire of a respective wiring layer and a diffusion barrier film, wherein the diffusion barrier film contacts each wire of the first plurality of wiring layers;
forming a guard ring that includes a wire from each of the first plurality of wiring layers and a plurality of vias arranged in a stacked structure, wherein each wire from each of the first plurality of wiring layers is electrically connected to a respective via of the plurality of vias;
forming a second plurality of wiring layers and a plurality of pads at a side of a second substrate such that at least one interlayer insulating film layer is between each wire of a respective wiring layer and a diffusion barrier film, wherein each wire of the second plurality of wiring layers is disposed on the diffusion barrier film and at least one pad is electrically connected to a wire of a wiring layer of the second plurality of wiring layers;
bonding the first substrate to the second substrate; and
forming a through-electrode inside the guard ring such that the guard ring is electrically connected to the at least one pad, wherein at least one via of the plurality of vias includes a metal material disposed between the diffusion barrier film and the through-electrode.
2. The method of manufacturing the device according to claim 1 , wherein the first substrate is electrically connected to the second substrate through the through-electrode.
3. The method of manufacturing the device according to claim 2 , further comprising:
stacking a semiconductor substrate including a contact image sensor (CIS) on the first substrate.
4. The method of manufacturing the device according to claim 2 , wherein the first substrate includes a signal processing circuit.
5. The method of manufacturing the device according to claim 2 , wherein the first substrate includes a contact image sensor (CIS).
6. The method of manufacturing the device according to claim 2 , further comprising:
stacking another substrate that includes a signal processing circuit on the device.
7. The method of manufacturing the device according to claim 2 , further comprising:
stacking a third substrate that includes a storage medium circuit on the device.
8. The method of manufacturing the device according to claim 1 , wherein the first substrate is a first semiconductor substrate and the second substrate is a second semiconductor substrate.
9. A method of manufacturing an electronic apparatus, the method comprising:
forming a first plurality of wiring layers at a side of a first substrate such that at least one low-dielectric rate interlayer insulating film layer is between each wire of a respective wiring layer and a diffusion barrier film, wherein the diffusion barrier film contacts each wire of the first plurality of wiring layers;
forming a guard ring that includes a wire from each of the first plurality of wiring layers and a plurality of vias arranged in a stacked structure, wherein each wire from each of the first plurality of wiring layers is electrically connected to a respective via of the plurality of vias;
forming a second plurality of wiring layers and a plurality of pads at a side of a second substrate such that at least one interlayer insulating film layer is between each wire of a respective wiring layer and a diffusion barrier film, wherein each wire of the second plurality of wiring layers is disposed on the diffusion barrier film and at least one pad is electrically connected to a wire of a wiring layer of the second plurality of wiring layers;
bonding the first substrate to the second substrate;
forming a through-electrode inside the guard ring such that the guard ring is electrically connected to the at least one pad, wherein at least one via of the plurality of vias includes a metal material disposed between the diffusion barrier film and the through-electrode; and
providing a lens configured to direct light to a light-incident surface of the first substrate or the second substrate.
10. The method of manufacturing the electronic apparatus according to claim 9 , wherein the first substrate is electrically connected to the second substrate through the through-electrode.
11. The method of manufacturing the electronic apparatus according to claim 10 , further comprising:
stacking a semiconductor substrate including a contact image sensor (CIS) on the first substrate.
12. The method of manufacturing the electronic apparatus according to claim 10 , wherein the first substrate includes a signal processing circuit.
13. The method of manufacturing the electronic apparatus according to claim 10 , wherein the first substrate includes a contact image sensor (CIS).
14. The method of manufacturing the electronic apparatus according to claim 10 , further comprising:
stacking another substrate that includes a signal processing circuit on one of the first or second substrates.
15. The method of manufacturing the electronic apparatus according to claim 10 , further comprising:
stacking a third substrate that includes a storage medium circuit on one of the first or second substrates.
16. The method of manufacturing the electronic apparatus according to claim 9 , wherein the first substrate is a first semiconductor substrate and the second substrate is a second semiconductor substrate.