Interconnect structure for stacked device
A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.
1. A device comprising: a first semiconductor element comprising: a first substrate; a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal- dielectric layers over the first substrate, wherein each of the first conductive features has a first segment having a first thickness and a second segment having a second thickness that is different from the first thickness, and wherein a side surface of the first segment and an upper surface of the second segment collectively define a partial recess; a second semiconductor semiconductor element bonded to the first semiconductor element, wherein the second semiconductor element comprises: a second substrate; and a plurality of second conductive features formed in second inter- metal-dielectric layers over the second substrate; and a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features and isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers, the conductive deep-interconnection-plug including: an upper portion formed in the dielectric block and the first inter- metal-dielectric layers, wherein the upper portion is of a first width; and a lower portion formed in the first and second inter-metal-dielectric layers, wherein the lower portion is of a second width less than the first width.
2. The device of claim 1 , wherein the conductive deep-interconnection-plug fills the partial recess in a manner such that no portions of the first inter-metal dielectric layers are disposed between the deep-interconnection-plug and the first conductive features within the partial recess.
3. The device of claim 1 , wherein the upper portion of the conductive deep-interconnection-plug is isolated by the dielectric block and the first inter-metal dielectric layers.
4. The device of claim 1 , wherein the lower portion of the conductive deep-interconnection-plug is isolated by the second inter-metal dielectric layers.
5. The device of claim 1 , wherein multiple deep-interconnection-plugs are formed in a single dielectric block.
6. The device of claim 1 , wherein a single deep-interconnection-plug is formed in the dielectric block.
7. The device of claim 1 , wherein the second segment of each of the first conductive features is in direct contact with the conductive deep-interconnection-plug, and wherein the second thickness is less than the first thickness.
8. A stacked integrated circuit device comprising: a first semiconductor element having a first substrate, a dielectric block disposed in the first substrate, and first conductive features over the first substrate, wherein each of the first conductive features has a first segment having a first thickness and a second segment having a second thickness that is different from the first thickness, wherein a sidewall of the first segment is not aligned with a sidewall of the second segment, and wherein the first segment and the second segment jointly define a partial recess; a second semiconductor element bonded to the first semiconductor element, wherein the second semiconductor element comprises a second substrate and second conductive features over the second substrate; and a conductive deep-interconnection-plug coupled between the first and second conductive features and filling the partial recess, wherein the conductive deep- interconnection-plug comprises: an upper portion with a first width, wherein a portion of the upper portion isolated by the dielectric block; and a lower portion with a second width.
9. The device of claim 8 , wherein the first width of the upper portion of the conductive deep-interconnection-plug is substantially larger than the second width of the lower portion.
10. The device of claim 8 , further comprising: first inter-metal-dielectric (IMD) layers disposed in the first semiconductor element; and second inter-metal-dielectric (IMD) layers disposed in the second semiconductor element.
11. The device of claim 10 , wherein the upper portion of the deep-interconnection-plug is disposed in the dielectric block and first IMD layers, wherein the lower portion of the deep-interconnection-plug is disposed in the first and second IMD layers.
12. The device of claim 8 , wherein multiple deep-interconnection-plugs are formed in a single dielectric block.
13. The device of claim 8 , wherein a single deep-interconnection-plug is formed in the dielectric block.
14. A device comprising: a first substrate; a dielectric element disposed in the first substrate; a first interconnect structure disposed over the first substrate, wherein the first interconnect structure contains a first inter-metal-dielectric (IMD) and a first conductive element embedded in the first IMD, wherein the first conductive element has a first segment having a first thickness and a second segment having a second thickness that is different from the first thickness, and wherein a side surface of the first segment in combination with an upper surface of the second segment define a partial recess; a second substrate; a second interconnect structure disposed over the second substrate, wherein the second interconnect structure is attached to the first interconnect structure, and wherein the second interconnect structure contains a second IMD and a second conductive element embedded in the second IMD; and an elongated interconnection plug that extends through the first substrate, through the first interconnect structure and filling the partial recess, and through a portion of the second interconnect structure, wherein the elongated interconnection plug is electrically coupled to both the first conductive element and the second conductive element; and a barrier layer surrounding the elongated interconnection plug, wherein the barrier layer is in physical contact with a sidewall of the first conductive element.
15. The device of claim 14 , wherein:
a first end portion of the elongated interconnection plug is circumferentially surrounded by the dielectric element disposed in the first substrate; and
a second end portion of the elongated interconnection plug is in direct physical contact with the second conductive element.
16. The device of claim 15 , wherein:
a third portion of the elongated interconnection plug is disposed between the first end portion and the second end portion, the third portion having a first side surface and a second side surface; and
the first side surface is in direct physical contact with the first conductive element.
17. The device of claim 16 , wherein:
the first interconnect structure further contains an additional first conductive element embedded in the first IMD; and
the second side surface is in direct physical contact with the additional first conductive element.
18. The device of claim 15 , wherein:
the first end portion has a first lateral dimension; and
the second end portion has a second lateral dimension that is smaller than the first lateral dimension.
19. The device of claim 14 , further comprising a plurality of additional elongated interconnection plugs.
20. The device of claim 14 , wherein a surface of the first substrate facing away from the first interconnect structure is substantially planar.