Fin-based diode structures with a realigned feature layout

1. A device structure formed using a substrate, the device structure comprising:

a first gate structure;

a second gate structure arranged parallel to the first gate structure;

a first fin and a second fin each extending vertically from a top surface of the substrate, the first fin and the second fin arranged between and parallel to the first gate structure and the second gate structure; and

a first contact structure coupled with the first fin and the second fin,

wherein the first contact structure is laterally arranged between the first gate structure and the second gate structure.

2. The device structure of claim 1 further comprising:

a shallow trench isolation region surrounding the first fin and the second fin,

wherein the first gate structure and the second gate structure are arranged on the top surface of the shallow trench isolation region.

3. The device structure of claim 2 wherein the first fin and the second fin have a first height relative to the top surface of the shallow trench isolation region, the first gate structure and the second gate structure have a second height relative to the top surface of the shallow trench isolation region, and the second height is greater than the first height.

4. The device structure of claim 3 wherein the first contact structure is spaced above the top surface of the shallow trench isolation region.

5. The device structure of claim 1 wherein a first portion of the first contact structure is in contact with the first gate structure and a second portion of the first contact structure is in contact with the second gate structure.

6. The device structure of claim 5 further comprising:

a conformal dielectric layer on the first gate structure and on the second gate structure,

wherein the first portion of the first contact structure is in direct contact with a first section of the conformal dielectric layer on the first gate structure and the second portion of the first contact structure is in direct contact with a second section of the conformal dielectric layer on the second gate structure.

7. The device structure of claim 1 wherein the first fin and the second fin have a conductivity type, and further comprising:

a well in the substrate below the first fin and the second fin, the well having the conductivity type of the first fin and the second fin.

8. The device structure of claim 1 wherein the first fin and the second fin each have a first section of a first conductivity type, and further comprising:

a well in the substrate below the first fin and the second fin, the well having a second conductivity type opposite from the first conductivity type.

9. The device structure of claim 8 wherein the first fin has a second section of the second conductivity type arranged vertically between the first section of the first fin and the well, the second fin has a second section of the second conductivity type arranged vertically between the first section of the second fin and the second section of the second fin, the first section of the first fin and the second section of the first fin participate in forming a diode junction, and the first section of the second fin and the second section of the second fin further participate in forming the diode junction.

10. The device structure of claim 9 further comprising:

a shallow trench isolation region surrounding the first fin and the second fin,

wherein the shallow trench isolation region has a top surface, and the second section of the first fin and the second section of the second fin are arranged beneath the top surface of the shallow trench isolation region.

11. The device structure of claim 10 wherein the first gate structure and the second gate structure are positioned on the top surface of the shallow trench isolation region.

12. The device structure of claim 9 further comprising:

a third gate structure;

a fourth gate structure arranged parallel to the third gate structure;

a third fin and a fourth fin each extending vertically from the substrate, the third fin and the fourth fin arranged between the third gate structure and the fourth gate structure; and

a second contact structure coupled with the first fin and the second fin,

wherein the second contact structure is laterally arranged between the third gate structure and the fourth gate structure, and the second contact structure has the second conductivity type.

13. The device structure of claim 12 wherein the well extends beneath the third fin and the fourth fin, and the third fin and the fourth fin have the second conductivity type.

14. The device structure of claim 12 wherein the well couples the third fin and the fourth fin with the first fin and the second fin to form a fin-based diode structure.

15. A method comprising:

forming a first fin and a second fin each extending vertically from a substrate;

depositing a gate material layer over the substrate;

patterning the gate material layer to form a first gate structure and a second gate structure arranged parallel to the first gate structure; and

after patterning the gate material layer, epitaxially growing a first semiconductor material from the first fin and the second fin,

wherein the first fin and the second fin are arranged between and parallel to the first gate structure and the second gate structure, and the first semiconductor material is laterally arranged between the first gate structure and the second gate structure.

16. The method of claim 15 further comprising:

forming a shallow trench isolation region surrounding the first fin and the second fin,

wherein the gate material layer is deposited on the shallow trench isolation region.

17. The method of claim 16 wherein the first fin and the second fin have a height relative to a top surface of the shallow trench isolation region, and the gate material layer has a thickness that is greater than the height of the first fin and the second fin.

18. The method of claim 15 wherein the first fin and the second fin each have a first section of a first conductivity type, and further comprising:

forming a well in the substrate below the first fin and the second fin,

wherein the well has a second conductivity type opposite from the first conductivity type.

19. The method of claim 18 wherein the first fin has a second section of the second conductivity type arranged vertically between the first section of the first fin and the well, the second fin has a second section of the second conductivity type arranged vertically between the first section of the second fin and the second section of the second fin, the first section of the first fin and the second section of the first fin participate in forming a diode junction, and the first section of the second fin and the second section of the second fin further participate in forming the diode junction.

20. The method of claim 19 further comprising:

forming a third gate structure and a fourth gate structure arranged parallel to the third gate structure;

forming a third fin and a fourth fin each extending vertically from the substrate, the third fin and the fourth fin arranged between the third gate structure and the fourth gate structure; and

epitaxially growing a second semiconductor material from the first fin and the second fin,

wherein the second semiconductor material is laterally arranged between the third gate structure and the fourth gate structure, the second semiconductor material has the second conductivity type, the well extends beneath the third fin and the fourth fin to couple the third fin and the fourth fin with the first fin and the second fin to form a fin diode, and the third fin and the fourth fin have the second conductivity type.