Semiconductor device
A semiconductor device includes a first semiconductor chip including plural circuit blocks provided on a semiconductor substrate, and plural through-silicon vias that are arranged so as to surround the outer periphery of each of the plural circuit blocks and that penetrate the semiconductor substrate, and a second semiconductor chip that is stacked on the first semiconductor chip, and that is supplied with a power source through the plural through-silicon vias.
1. A semiconductor device comprising:
a first semiconductor chip that includes a plurality of circuit blocks provided on a semiconductor substrate, and a plurality of through-silicon vias that are arranged so as to surround the outer periphery of each of the plurality of circuit blocks and that penetrate the semiconductor substrate, the first semiconductor chip includes, at a face on a side at which the second semiconductor chip is stacked, a plurality of redistribution layers electrically connected to the through-silicon vias; and
a second semiconductor chip that is stacked on the first semiconductor chip, and that is supplied with a power source through the plurality of through-silicon vias, at least a single through-silicon via is disposed on each side of the circuit blocks, the second semiconductor chip is electrically connected to the plurality of through-silicon vias through the plurality of redistribution layers,
among the plurality of through-silicon vias, the plurality of redistribution layers are connected to through-silicon vias that are disposed facing each other across the circuit blocks and that are applied with the same potential.
2. The semiconductor device of claim 1 , wherein, among the plurality of through-silicon vias, through-silicon vias that are applied with a first potential are alternately arranged with through-silicon vias that are applied with a second potential that is different from the first potential.
3. The semiconductor device of claim 1 , wherein, among the plurality of through-silicon vias, through-silicon vias facing each other across the circuit blocks have the same potential.
4. The semiconductor device of claim 1 , wherein each of the plurality of circuit blocks is formed with the same size, and the plurality of circuit blocks are arranged on the semiconductor substrate at uniform spacing.
5. The semiconductor device of claim 1 , wherein:
the second semiconductor chip includes a plurality of second circuit blocks provided on a second semiconductor substrate, and a plurality of second through-silicon vias that are arranged so as to surround the outer periphery of each of the plurality of second circuit blocks, that penetrate the second semiconductor substrate, and that are electrically connected to the through-silicon vias provided at the first semiconductor chip; and
the semiconductor device further comprises a third semiconductor chip that is stacked on the second semiconductor chip and that is supplied with a power source through the plurality of second through-silicon vias.
6. The semiconductor device of claim 1 , wherein each of the plurality of redistribution layers extends in a straight line from one end side of the first semiconductor chip, toward another end side of the first semiconductor chip.
7. The semiconductor device of claim 1 , wherein, among the plurality of redistribution layers, each of the plurality of redistribution layers applied with a first potential are alternately arranged with each of the plurality of redistribution layers applied with a second potential that is different from the first potential.
8. The semiconductor device of claim 1 , further comprising:
a relay board that is provided between the first semiconductor chip and the second semiconductor chip, and that includes a plurality of first relay lines that are electrically connected to the plurality of redistribution layers;
wherein the second semiconductor chip is electrically connected to the plurality of through-silicon vias through the plurality of first relay lines and the plurality of redistribution layers.
9. The semiconductor device of claim 8 , wherein each of the plurality of first relay lines is arranged so as to intersect the plurality of redistribution layers, and is connected to a redistribution layer applied with the same potential among the plurality of redistribution layers.
10. The semiconductor device of claim 8 , wherein each of the plurality of first relay lines extends in a straight line from one end side of the first semiconductor chip and the second semiconductor chip, toward another end side of the first semiconductor chip and the second semiconductor chip.
11. The semiconductor device of claim 8 , wherein, among the plurality of first relay lines, relay lines applied with a first potential are alternately arranged with relay lines applied with a second potential that is different from the first potential.
12. The semiconductor device of claim 8 , wherein the relay board further includes a plurality of second relay lines that are arranged so as to intersect the first relay lines, and that are connected to relay lines applied with the same potential among the plurality of first relay lines.
13. The semiconductor device of claim 12 , wherein each of the plurality of second relay lines extends in a straight line from one end side of the first semiconductor chip and the second semiconductor chip, toward another end side of the first semiconductor chip and the second semiconductor chip.
14. The semiconductor device of claim 11 , wherein, among the plurality of second relay lines, relay lines applied with the first potential are alternately arranged with relay lines applied with the second potential that is different from the first potential.
15. The semiconductor device of claim 8 , wherein the relay board is a silicon interposer.