Semiconductor device and manufacturing method thereof
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
1. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor layer formed by sputtering over the gate insulating film;
a source electrode and a drain electrode over the oxide semiconductor layer; and
an insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode,
wherein a portion of the oxide semiconductor layer located between the source electrode and the drain electrode is thinner than portions of the oxide semiconductor layer below the source electrode and the drain electrode,
wherein a superficial portion of at least the portion of the oxide semiconductor layer located between the source electrode and the drain electrode includes a crystal region,
wherein a c-axis of the crystal region is aligned in a direction which is substantially perpendicular to a top surface of the oxide semiconductor layer, and
wherein the oxide semiconductor layer includes indium, gallium, and zinc.
2. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer contains hydrogen at a concentration less than or equal to 5×10 19 /cm 3 .
3. The semiconductor device according to claim 1 , wherein the insulating film is in contact with the portion of the oxide semiconductor layer.
4. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor layer formed by sputtering over the gate insulating film;
a source electrode and a drain electrode over the oxide semiconductor layer; and
an insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode,
wherein a portion of the oxide semiconductor layer located between the source electrode and the drain electrode is thinner than portions of the oxide semiconductor layer below the source electrode and the drain electrode,
wherein a superficial portion of at least the portion of the oxide semiconductor layer located between the source electrode and the drain electrode includes crystals,
wherein each crystal has a structure that is c-axis oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer at a location of the crystal, and
wherein the oxide semiconductor layer includes indium, gallium, and zinc.
5. The semiconductor device according to claim 4 , wherein the oxide semiconductor layer contains hydrogen at a concentration less than or equal to 5×10 19 /cm 3 .
6. The semiconductor device according to claim 4 , wherein the insulating film is in contact with the portion of the oxide semiconductor layer.
7. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor layer formed by sputtering over the gate insulating film, the oxide semiconductor layer comprising a first region and a second region;
a source electrode and a drain electrode over the oxide semiconductor layer; and
an insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode,
wherein the first region is located between the gate insulating film and the second region,
wherein the first region comprises a nanocrystal and the second region comprises a crystal structure,
wherein a portion of the oxide semiconductor layer located between the source electrode and the drain electrode is thinner than portions of the oxide semiconductor layer below the source electrode and the drain electrode,
wherein the portion of the oxide semiconductor layer located between the source electrode and the drain electrode includes the second region,
wherein a c-axis of the crystal structure is aligned in a direction which is substantially perpendicular to a top surface of the oxide semiconductor layer, and
wherein the oxide semiconductor layer includes indium, gallium, and zinc.
8. The semiconductor device according to claim 7 , wherein the oxide semiconductor layer contains hydrogen at a concentration less than or equal to 5×10 19 /cm 3 .
9. The semiconductor device according to claim 7 , wherein the insulating film is in contact with the portion of the oxide semiconductor layer.