Photoresist and method
A photoresist with a group which will decompose bonded to a high etching resistance moiety is provided. Alternatively, the group which will decompose can additionally be attached to a re-attachment group that will re-attach to the polymer after the group which will decompose has cleaved from the polymer. The photoresist may also comprise a non-leaving monomer with a cross-linking site and a cross-linking agent.
1. A method of manufacturing a semiconductor device, the method comprising:
dispensing a photoresist onto a substrate, the photoresist comprising a polymer comprising:
a hydrocarbon backbone; and
a group which will decompose bonded to the hydrocarbon backbone; and
exposing the photoresist to a patterned energy source, wherein the exposing the photoresist initiates a first set of reactions, the first set of reactions comprising:
a decomposition of the group which will decompose from a first point on the hydrocarbon backbone; and
a bonding of the group which will decompose to a second point on the hydrocarbon backbone different from the first point on the hydrocarbon backbone.
2. The method of claim 1 , wherein the group which will decompose comprises a reattachment group, the reattachment group comprising OCH 3 .
3. The method of claim 1 , wherein the group which will decompose comprises a reattachment group, the reattachment group comprising OC 2 H 5 .
4. The method of claim 1 , wherein the group which will decompose comprises a reattachment group, the reattachment group comprising OC 3 H 7 .
5. The method of claim 1 , wherein the group which will decompose comprises a reattachment group, the reattachment group comprising CH 2 OC 3 H 7 .
6. The method of claim 1 , wherein the group which will decompose comprises a reattachment group, the reattachment group comprising CH 2 CH 2 OC 4 H 9 .
7. A photoresist comprising:
a polymer comprising:
a hydrocarbon backbone; and
a high etch resistance structure attached to a hydrocarbon backbone, wherein the high etch resistance structure comprises a bridged cyclic structure with at least two rings bonded to a carbon in the hydrocarbon backbone through only carbon-carbon bonds, and a group which will decompose, wherein the high etch resistance structure comprises the following structure R 1 :
wherein R 2 is the group which will decompose;
a catalyst; and
a solvent.
8. The photoresist of claim 7 , wherein the group which will decompose has a loading on the hydrocarbon backbone of between 1% and 10%.
9. The photoresist of claim 7 , wherein the high etch resistance structure has the following structure:
wherein R 3 is a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, and isobutyl group, a pentyl group, or an isopentyl group.
10. The photoresist of claim 7 , wherein the high etch resistance structure has the following structure:
wherein R 3 is a C1 to C3 alkylene chain.
11. The photoresist of claim 7 , wherein the high etch resistance structure has the following structure:
wherein R 3 is a C1 to C3 alkylene chain.
12. The photoresist of claim 7 , wherein the high etch resistance structure has the following structure:
wherein R 3 is a C1 to C3 alkylene chain.
13. The photoresist of claim 7 , wherein the high etch resistance structure has the following structure:
wherein R 3 is a C1 to C3 alkylene chain.
14. The photoresist of claim 7 , wherein the high etch resistance structure has the following structure:
wherein R 3 is a C1 to C3 alkylene chain.
15. A method of manufacturing a semiconductor device, the method comprising:
dispensing a photoresist onto a layer to be patterned, the photoresist comprising a polymer comprising:
a hydrocarbon backbone;
a cross-linking group bonded to the hydrocarbon backbone; and
a group which will decompose bonded to the hydrocarbon backbone;
generating an acid H+ within the photoresist, wherein the acid H+ causes the group which will decompose to decompose and also causes the cross-linking group to bond with a crosslinking agent and trap a group produced by the decomposition of the group which will decompose; and
developing the photoresist after the generating the acid H+, wherein the group produced by the decomposition of the group which will decompose is present during the developing.
16. The method of claim 15 , wherein the cross-linking group has a loading of between 5% and 50%, wherein the loading is based on the number of sites available on the hydrocarbon backbone.
17. The method of claim 16 , the polymer further comprising a high etching resistance moiety.
18. The method of claim 17 , wherein the high etching resistance moiety has a loading of between 5% and 50%.
19. The method of claim 15 , wherein the cross-linking group has a loading of between 10% and 50%, wherein the loading is based on the number of sites available on the hydrocarbon backbone.
20. The method of claim 15 , wherein the cross-linking group is part of a non-cleaving group with the following structure:
wherein R 1 is OCH 3 , OC 2 H 5 , OC 3 H 7 , OC 4 H 9 , CH 2 OCH 3 , CH 2 OC 2 H 5 , CH 2 OC 3 H 7 , CH 2 OC 4 H 9 , CH 2 CH 2 OCH 3 , CH 2 CH 2 OC 2 H 5 , CH 2 CH 2 OC 3 H 7 , or CH 2 CH 2 OC 4 H 9 and wherein R 2 is a C 1 to C 5 alkylene chain.