LDMOS finFET structures with multiple gate structures

1. A structure for a field-effect transistor that is formed using a substrate, the structure comprising:

a first fin and a second fin on the substrate;

a first well that is arranged partially in the substrate and partially in the first fin, the first well having a first conductivity type;

a second well that is arranged partially in the substrate, partially in the first fin, and partially in the second fin, the second well having a second conductivity type;

a first source/drain region of the second conductivity type within the first well in the first fin;

a second source/drain region of the second conductivity type within the second well in the second fin;

a first gate structure arranged to overlap with a first portion of the first fin;

a second gate structure arranged to overlap with a second portion of the first fin, the second gate structure spaced along the first fin from the first gate structure; and

a doped region arranged within the second well in the first fin between the first gate structure and the second gate structure, the doped region having the first conductivity type.

2. The structure of claim 1 wherein the second well includes a first region and a second region in which the second source/drain region is arranged, the first region of the second well is arranged partially in the first fin and partially in the substrate between the first well and the second region of the second well, and the second region of the second well is located in the second fin.

3. The structure of claim 2 wherein the first well and the first region of the second well converge along a junction, and the first region of the second well separates the first well from the second region of the second well.

4. The structure of claim 3 wherein the first gate structure overlies the junction between the first well and the first region of the second well.

5. The structure of claim 4 further comprising:

a trench isolation region between the first fin and the second fin,

wherein the first region of the second well and the second region of the second well converge beneath the trench isolation region.

6. The structure of claim 2 wherein the first region of the second well is doped with a first concentration of a dopant providing the second conductivity type, the second region of the second well is doped with a second concentration of the dopant providing the second conductivity type, and the second concentration is greater than the first concentration.

7. The structure of claim 2 wherein the doped region is coupled with the first region of the second well.

8. The structure of claim 7 further comprising:

a trench isolation region between the first fin and the second fin,

wherein the second gate structure is arranged between the doped region and the trench isolation region.

9. The structure of claim 2 wherein the first region of the second well surrounds the second region of the second well.

10. The structure of claim 1 further comprising:

a third gate structure overlapping a third portion of the first fin, the third gate structure spaced along the first fin from the first gate structure, and the first gate structure and the third gate structure are arranged between the first source/drain region and the doped region.

11. The structure of claim 1 wherein the doped region is not contacted.

12. The structure of claim 1 further comprising:

a trench isolation region between the first fin and the second fin,

wherein a portion of the second gate structure has an overlapping relationship with the trench isolation region.

13. The structure of claim 1 wherein the first conductivity type is n-type conductivity, and the second conductivity type is p-type conductivity.

14. A method of fabricating a field-effect transistor, the method comprising:

forming a first fin and a second fin on a substrate;

forming a first well that is arranged partially in the substrate and partially in the first fin, the first well having a first conductivity type;

forming a second well that is arranged partially in the substrate, partially in the first fin, and partially in the second fin, the second well having a second conductivity type;

forming a first source/drain region of the second conductivity type within the first well in the first fin;

forming a second source/drain region of the second conductivity type within the second well in the second fin;

forming a first gate structure that overlaps with a first portion of the first fin;

forming a second gate structure that overlaps with a second portion of the first fin, the second gate structure is spaced along the first fin from the first gate structure; and

forming a doped region arranged within the second well in the first fin between the first gate structure and the second gate structure, the doped region having the first conductivity type.

15. The method of claim 14 wherein the second well includes a first region and a second region in which the second source/drain region is arranged, the first region of the second well is arranged partially in the first fin and partially in the substrate between the first well and the second region of the second well, and the second region of the second well is located in the second fin.

16. The method of claim 15 wherein the first well and the first region of the second well converge along a junction, and the first region of the second well separates the first well from the second region of the second well.

17. The method of claim 15 wherein the doped region is directly coupled with the first region of the second well, and the first region of the second well is more lightly doped than the second region of the second well.

18. The method of claim 17 further comprising:

forming a trench isolation region arranged between the first fin and the second fin,

wherein a portion of the second gate structure has an overlapping relationship with the trench isolation region, and the second gate structure is arranged between the doped region and the trench isolation region.

19. The method of claim 17 further comprising:

forming a third gate structure overlapping a third portion of the first fin,

wherein the third gate structure is spaced along the first fin from the first gate structure, and the first gate structure and the third gate structure are arranged between the first source/drain region and the doped region.

20. The method of claim 14 further comprising:

forming a trench isolation region between the first fin and the second fin,

wherein a portion of the second gate structure has an overlapping relationship with the trench isolation region.