Self-aligned contact with CMP stop layer
In a self-aligned contact (SAC) process, a sacrificial etch stop layer is embedded over source/drain regions, i.e., directly over an interlayer dielectric (IDL) disposed over source/drain regions to enable polishing of a nitride capping layer with respect to the interlayer dielectric. The sacrificial etch stop layer may comprise cobalt metal, and is adapted to be removed and replaced with additional ILD material after controlled polishing of the nitride capping layer.
1. A method of forming a device, comprising:
forming a source/drain region on a semiconductor fin;
forming a first interlayer dielectric over the source/drain region;
forming a gate structure over a channel region of the semiconductor fin, the gate structure laterally spaced from the first interlayer dielectric and the source/drain region by a sidewall spacer and comprising a gate dielectric formed directly over the channel region and a gate conductor formed over the gate dielectric;
etching at least the first interlayer dielectric selectively with respect to the gate conductor to form a first recessed region;
forming an etch stop layer within the first recessed region;
etching the gate conductor selectively with respect to the etch stop layer to form a second recessed region;
forming a dielectric layer over the etch stop layer and within the second recessed region;
polishing the dielectric layer to expose the etch stop layer;
removing the etch stop layer to form a third recessed region; and
forming a second interlayer dielectric within the third recessed region and directly over the first interlayer dielectric.
2. The method of claim 1 , wherein forming the etch stop layer comprises forming a conformal liner within the first recessed region and forming a fill layer over the conformal liner.
3. The method of claim 2 , further comprising polishing the fill layer to expose a top surface of the conformal liner.
4. The method of claim 2 , wherein the conformal liner comprises titanium nitride and the fill layer comprises cobalt.
5. The method of claim 2 , wherein forming the second recessed region further comprises etching a portion of the conformal liner.
6. The method of claim 1 , wherein the dielectric layer is formed directly over a top surface of the gate conductor.
7. The method of claim 1 , wherein the etching to form the first recessed region further comprises etching the sidewall spacer.
8. The method of claim 7 , wherein the dielectric layer is formed directly over a top surface of the gate conductor and directly over a top surface of the sidewall spacer.
9. The method of claim 1 , wherein polishing the dielectric layer comprises exposing a top surface of the etch stop layer.
10. The method of claim 1 , wherein after polishing the dielectric layer and exposing the etch stop layer, the dielectric layer thickness ranges from 10 to 40 nm.
11. The method of claim 1 , wherein the first interlayer dielectric and the second interlayer dielectric each comprise silicon dioxide.
12. The method of claim 1 , wherein a width of the third recessed region is substantially equal to a width of the first interlayer dielectric.
13. A method of forming a device, comprising:
forming a source/drain region on a semiconductor fin;
forming a first interlayer dielectric over the source/drain region;
forming a gate structure over the semiconductor fin, wherein the gate structure includes a gate conductor and is laterally spaced from the first interlayer dielectric by a sidewall spacer;
etching at least the first interlayer dielectric selectively with respect to the gate conductor to form a first recessed region;
forming an etch stop layer within the first recessed region, wherein the etch stop layer comprises a conformal liner formed over the first interlayer dielectric and over sidewalls of the gate conductor and a fill layer formed over the conformal liner;
etching the gate conductor selectively with respect to the etch stop layer to form a second recessed region;
forming a dielectric layer over the etch stop layer and within the second recessed region; and
polishing the dielectric layer to expose the etch stop layer.
14. The method of claim 13 , further comprising:
removing the etch stop layer to form a third recessed region; and
forming a second interlayer dielectric within the third recessed region and directly over the first interlayer dielectric.
15. The method of claim 13 , wherein the dielectric layer is formed directly over a top surface of the gate conductor.
16. The method of claim 13 , wherein forming the first recessed region further comprises etching the sidewall spacer.
17. The method of claim 16 , wherein the dielectric layer is formed directly over a top surface of the gate conductor and directly over a top surface of the sidewall spacer.
18. The method of claim 13 , wherein the conformal liner comprises titanium nitride and the fill layer comprises cobalt.