Semiconductor structure and manufacturing method thereof

1. A semiconductor structure, comprising:

a die including a surface;

a lid disposed over the surface of the die; and

a thermally conductive material disposed between the die and the lid, wherein the lid includes a protrusion protruded towards the surface of the die, the thermally conductive material surrounds the protrusion, the die includes a recess over the surface and surrounds at least a portion of the protrusion of the lid.

2. The semiconductor structure of claim 1 , wherein the protrusion is complementary to the recess.

3. The semiconductor structure of claim 1 , wherein the protrusion has a width between about 0.1 mm and about 1.5 mm, or has a height between about 50μm to about 150μm.

4. The semiconductor structure of claim 1 , wherein the recess has a height of about 50μm to about 150μm.

5. The semiconductor structure of claim 1 , wherein a thickness of the thermally conductive material is about 10μm to about 80μm.

6. The semiconductor structure of claim 1 , further comprising a molding surrounding the die, wherein the thermally conductive material and the lid are disposed over the molding.

7. The semiconductor structure of claim 1 , wherein the thermally conductive material is an adhesive, or includes polymeric or metallic material.

8. The semiconductor structure of claim 1 , further comprising a substrate and a conductive bump bonding the die with the substrate.

9. A method of manufacturing a semiconductor structure, comprising:

providing a die including a surface;

providing a lid;

removing a portion of the lid to form a protrusion;

removing a portion of the die to form a recess over the surface; and

disposing a thermally conductive material between the surface of the die and the lid, wherein the protrusion of the lid is surrounded by the thermally conductive material.

10. The method of claim 9 , wherein the removing the portion of the lid includes mechanical forging operations, or the removing the portion of the die includes wet etching operations or dry etching operations.

11. The method of claim 9 , wherein the protrusion of the lid is at least partially disposed within the recess of the die.

12. The method of claim 9 , further comprising inserting the protrusion of the lid into the thermally conductive material.

13. The semiconductor structure of claim 1 , wherein the thermally conductive material includes a combination of an adhesive thermal interface material and a metallic thermal interface material.

14. The semiconductor structure of claim 1 , wherein the lid comprises a ring member surrounding the die and a covering member disposed over the die and the ring member.

15. The semiconductor structure of claim 1 , wherein a width of the recess of the die is greater than a width of the protrusion of the lid.

16. A semiconductor structure, comprising:

a die;

a lid disposed over the die; and

a thermally conductive material disposed between the die and the lid, wherein the lid includes a plurality first protrusions protruded towards the die, the die includes a plurality of second protrusions protruded towards the lid, the first protrusions and the second protrusions are alternately arranged, and the thermally conductive material surrounds the first protrusions and the second protrusions.

17. The semiconductor structure of claim 16 , wherein a thickness of the thermally conductive material between the first protrusions and the second protrusions is consistent.

18. The semiconductor structure of claim 16 , wherein a thickness of the thermally conductive material between the first protrusions and the second protrusions is inconsistent.

19. The semiconductor structure of claim 1 , wherein the a thickness of the thermally conductive material between the protrusion of the lid and the recess of the die is consistent.

20. The semiconductor structure of claim 1 , wherein the a thickness of the thermally conductive material between the protrusion of the lid and the recess of the die is inconsistent.