Fabricating thin-film optoelectronic devices with added potassium
A method ( 200 ) and deposition zone apparatus ( 300 ) for fabricating thin-film optoelectronic devices ( 100 ), the method comprising: providing a potassium-nondiffusing substrate ( 110 ), forming a back-contact layer ( 120 ); forming at least one absorber layer ( 130 ) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer ( 150 ) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers ( 470 ) from back-contact layer ( 120 ), exclusive, to front-contact layer ( 150 ), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium. The method ( 200 ) and apparatus ( 300 ) are advantageous for more environmentally-friendly production of photovoltaic devices ( 100 ) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
1. A thin-film optoelectronic device, comprising:
a substrate;
a back-contact layer disposed over the substrate;
an absorber layer disposed over the back-contact layer, wherein the absorber layer comprises a chalcogenide material;
a buffer layer comprising an alkali metal disposed over the absorber layer; and
a front-contact layer disposed over the buffer layer.
2. The thin-film optoelectronic device of claim 1 , wherein the alkali metal of the buffer layer comprises potassium (K).
3. The thin-film optoelectronic device of claim 1 , wherein the alkali metal of the buffer layer comprises sodium (Na).
4. The thin-film optoelectronic device of claim 1 , wherein the buffer layer comprises cadmium (Cd).
5. The thin-film optoelectronic device of claim 4 , wherein the alkali metal of the buffer layer comprises potassium (K).
6. The thin-film optoelectronic device of claim 4 , wherein the alkali metal of the buffer layer comprises sodium (Na).
7. The thin-film optoelectronic device of claim 1 , wherein the buffer layer has a thickness between about 20 nm and about 30 nm.
8. The thin-film optoelectronic device of claim 1 , wherein the absorber layer comprises at least two alkali metals.
9. The thin-film optoelectronic device of claim 8 , wherein the at least two alkali metals of the absorber layer comprise potassium (K) and sodium (Na).
10. The thin-film optoelectronic device of claim 8 , wherein
the at least two alkali metals of the absorber layer comprise potassium (K) and sodium (Na),
a concentration of potassium (K) in the absorber layer is in a range of 1000 to 2000 ppm, and
a concentration of sodium (Na) in the absorber layer is in a range of 5 to 500 ppm.
11. The thin-film optoelectronic device of claim 1 , wherein the buffer layer has a thickness between about 20 nm and about 30 nm.
12. A thin-film optoelectronic device, comprising:
a substrate;
a back-contact layer disposed over the substrate;
an absorber layer disposed over the back-contact layer, wherein the absorber layer comprises a chalcogenide material;
a buffer layer comprising at least two alkali metals disposed over the absorber layer; and
a front-contact layer disposed over the buffer layer.
13. The thin-film optoelectronic device of claim 12 , wherein the at least two alkali metals of the buffer layer comprise potassium (K) and sodium (Na).
14. The thin-film optoelectronic device of claim 12 , wherein the buffer layer comprises cadmium sulfide (CdS).
15. The thin-film optoelectronic device of claim 12 , wherein the absorber layer comprises at least two alkali metals.
16. The thin-film optoelectronic device of claim 15 , wherein
the at least two alkali metals of the absorber layer comprise potassium (K) and sodium (Na),
a concentration of potassium (K) in the absorber layer is in a range of 1000 to 2000 ppm, and
a concentration of sodium (Na) in the absorber layer is in a range of 5 to 500 ppm.
17. The thin-film optoelectronic device of claim 16 , wherein the buffer layer has a thickness between about 20 nm and about 30 nm.
18. A thin-film optoelectronic device, comprising:
a substrate;
a back-contact layer disposed over the substrate;
an absorber layer disposed over the back-contact layer, the absorber layer formed of a chalcogenide material and comprising least two alkali metals including potassium (K) and sodium (Na), wherein
the chalcogenide material comprises Cu(In,Ga)Se 2 ,
a concentration of potassium (K) in the absorber layer is in a range of 1000 to 2000 ppm, and
a concentration of sodium (Na) in the absorber layer is in a range of 5 to 500 ppm;
a buffer layer comprising potassium (K) disposed over the absorber layer wherein the buffer layer has a thickness between about 20 nm and about 30 nm; and
a front-contact layer disposed over the buffer layer.
19. The thin-film optoelectronic device of claim 18 , wherein the buffer layer comprises cadmium sulfide (CdS).
20. The thin-film optoelectronic device of claim 18 , wherein thin-film optoelectronic device has a photovoltaic efficiency of at least 20%.